丝印代码：BSP318S；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

采用 SOT-223 封装的 N 沟道小信号 MOSFET 60 V

所有的小型单个 n 通道系列产品均适合汽车应用（2N7002 除外）。 • 增强模式\n• 无铅镀层；符合 RoHS\n• 质量符合 AEC Q101 标准\n /* Style Definitions */ table.MsoNormalTable{mso-style-name:\"Table Normal\";mso-style-parent:\"\";line-height:115%;font-size:11.0pt;\"Calibri\",\"sans-serif\";mso-fareast-\"Times New Roman\";}\n优势:;

SIPMOS Small-Signal Transistor(N channel Enhancement mode Logic Level Avalanche rated)

SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 1.2 ...2.0 V

SIPMOS Small-Signal-Transistor

Features • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated

SIPMOS Small-Signal-Transistor

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SIPMOS Small-Signal-Transistor

文件：559.9 Kbytes Page：9 Pages

PRECISION HIGH-SPEED OPERATIONAL AMPLIFIER

■ GENERAL DESCRIPTION The NJM318 is a precision high-speed operational amplifier, which designed for applications requiring wide bandwidth and high slew rate. They feature a factor of ten increases in speed over general purpose devices without sacrificing DC performance. The NJM318 has internal

PRECISION HIGH-SPEED OPERATIONAL AMPLIFIER

■ GENERAL DESCRIPTION The NJM318 is a precision high-speed operational amplifier, which designed for applications requiring wide bandwidth and high slew rate. They feature a factor of ten increases in speed over general purpose devices without sacrificing DC performance. The NJM318 has internal

Operational Amplifiers

文件：597.13 Kbytes Page：18 Pages

Operational Amplifiers

文件：597.13 Kbytes Page：18 Pages

Operational Amplifiers

文件：597.13 Kbytes Page：18 Pages