SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

Green device available.

Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RD

20V-250V P-Channel Power MOSFET

英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。 • 增强模式\n• 雪崩评级\n• 无铅镀层；符合 RoHS\n• 小信号封装，经 AEC Q101 认证\n\n优势:;

P-Channel 60-V (D-S) MOSFET

文件：953.86 Kbytes Page：7 Pages

SIPMOS Small-Signal-Transistor

文件：13.0991 Mbytes Page：9 Pages

SIPMOS횘 Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS짰 Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS Small-Signal-Transistor

Features • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

SIPMOS Small-Signal-Transistor

文件：13.0991 Mbytes Page：9 Pages

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 480 mV to 1050 mV • Total power dissipation: max. 350 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic

Silicon NPN Transistor, Medium Power Amp

Features: • AF – HF Medium Power Amplifier

10 mm Seven Segment Display

Description The TDS.31.. series are 10 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 6 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum