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BDT60晶体管资料

BDT60别名：BDT60三极管、BDT60晶体管、BDT60晶体三极管
BDT60生产厂家：英国Mullard有限公司
BDT60制作材料：Si-P+Darl+Di
BDT60性质：低频或音频放大（LF）_开关管（S）_功率放大（L
BDT60封装形式：直插封装
BDT60极限工作电压：60V
BDT60最大电流允许值：4A
BDT60最大工作频率：>10MHZ
BDT60引脚数：3
BDT60最大耗散功率：50W
BDT60放大倍数：β>750
BDT60图片代号：B-89
BDT60vtest：60
BDT60htest：10000100
BDT60atest：4
BDT60wtest：50

BDT60代换 BDT60用什么型号代替：BD716,BDW24A,BDW54A,BDW64A,TIP115,6035Y,

型号	功能描述	生产厂家企业	LOGO
BDT60	Complement to Type BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C APPLICATIONS ·Designed for use in audi	ISC 无锡固电	ISC
BDT60	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C • 50 W at 25 °C Case Temperature • 4 A Continuous Collector Current • Minimum hFE of 750 at 1.5 V, 3 A	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT60	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A	POINN	POINN
BDT60	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A	TRSYS Transys Electronics	TRSYS
BDT60	PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C\n● 50 W at 25°C Case Temperature\n● 4 A Continuous Collector Current\n● Minimum hFE of 750 at 1.5 V, 3 A	BOURNS 伯恩斯	BOURNS
BDT60	PNP SILICON POWER DARLINGTONS	POINN	POINN
BDT60	PNP SILICON POWER DARLINGTONS	TRANSYS	TRANSYS
BDT60	PNP SILICON POWER DARLINGTONS 文件：119.03 Kbytes Page：5 Pages	BOURNS 伯恩斯	BOURNS
BDT60A	Complement to Type BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C APPLICATIONS ·Designed for use in audi	ISC 无锡固电	ISC
BDT60A	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C • 50 W at 25 °C Case Temperature • 4 A Continuous Collector Current • Minimum hFE of 750 at 1.5 V, 3 A	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT60A	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A	POINN	POINN
BDT60A	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A	TRSYS Transys Electronics	TRSYS
BDT60AF	Silicon PNP Darlington Power Transistors DESCRIPTION • DC Current Gain -hFE= 750(Min)@ IC=-1.5A • Collector-Emitter Sustaining Voltage- : VCEo(sus) = -60V(Min)- BDT60F; -SOV(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF • Complement to Type BDT61F/	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT60AF	isc Silicon PNP Darlington Power Transistors DESCRIPTION · DC Current Gain -hFE = 750(Min)@ IC= -1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF · Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS · D	ISC 无锡固电	ISC
BDT60B	Complement to Type BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C APPLICATIONS ·Designed for use in audi	ISC 无锡固电	ISC
BDT60B	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C • 50 W at 25 °C Case Temperature • 4 A Continuous Collector Current • Minimum hFE of 750 at 1.5 V, 3 A	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT60B	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A	TRSYS Transys Electronics	TRSYS
BDT60B	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A	POINN	POINN
BDT60BF	Silicon PNP Darlington Power Transistors DESCRIPTION • DC Current Gain -hFE= 750(Min)@ IC=-1.5A • Collector-Emitter Sustaining Voltage- : VCEo(sus) = -60V(Min)- BDT60F; -SOV(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF • Complement to Type BDT61F/	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT60BF	isc Silicon PNP Darlington Power Transistors DESCRIPTION · DC Current Gain -hFE = 750(Min)@ IC= -1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF · Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS · D	ISC 无锡固电	ISC
BDT60C	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C • 50 W at 25 °C Case Temperature • 4 A Continuous Collector Current • Minimum hFE of 750 at 1.5 V, 3 A	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT60C	Complement to Type BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C APPLICATIONS ·Designed for use in audi	ISC 无锡固电	ISC
BDT60C	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A	TRSYS Transys Electronics	TRSYS
BDT60C	PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A	POINN	POINN
BDT60CF	Silicon PNP Darlington Power Transistors DESCRIPTION • DC Current Gain -hFE= 750(Min)@ IC=-1.5A • Collector-Emitter Sustaining Voltage- : VCEo(sus) = -60V(Min)- BDT60F; -SOV(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF • Complement to Type BDT61F/	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT60CF	isc Silicon PNP Darlington Power Transistors DESCRIPTION · DC Current Gain -hFE = 750(Min)@ IC= -1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF · Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS · D	ISC 无锡固电	ISC
BDT60F	isc Silicon PNP Darlington Power Transistors DESCRIPTION · DC Current Gain -hFE = 750(Min)@ IC= -1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF · Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS · D	ISC 无锡固电	ISC
BDT60F	Silicon PNP Darlington Power Transistors DESCRIPTION • DC Current Gain -hFE= 750(Min)@ IC=-1.5A • Collector-Emitter Sustaining Voltage- : VCEo(sus) = -60V(Min)- BDT60F; -SOV(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF • Complement to Type BDT61F/	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT60A	PNP SILICON POWER DARLINGTONS 文件：119.03 Kbytes Page：5 Pages	BOURNS 伯恩斯	BOURNS
BDT60B	PNP SILICON POWER DARLINGTONS 文件：119.03 Kbytes Page：5 Pages	BOURNS 伯恩斯	BOURNS
BDT60C	PNP SILICON POWER DARLINGTONS 文件：119.03 Kbytes Page：5 Pages	BOURNS 伯恩斯	BOURNS
BDT60C-S	封装/外壳：TO-220-3 包装：管件描述：TRANS PNP DARL 120V 4A TO220 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
BDT60-S	封装/外壳：TO-220-3 包装：管件描述：TRANS PNP DARL 60V 4A TO220 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC

BDT60产品属性

类型
描述
Number of Elements per Chip：
1
Minimum Operating Temperature：
-65°C
Minimum DC Current Gain：
750@3A@1.5V
Maximum Operating Temperature：
150°C
Maximum Emitter Base Voltage：
5V
Maximum Continuous DC Collector Current：
4A
Maximum Collector Emitter Voltage：
60V
Maximum Collector Base Voltage：
60V
Configuration：
Single

BDT60供应商更多...

更新时间：2026-5-15 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	BDT60C-S	Bourns Inc.	25+	TO-220	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市高捷芯城科技有限公司	BDT60C-S	Bourns Inc.	25+	TO-220	18746	样件支持,可原厂排单订货!	询价
深圳市科芯源微电子有限公司	BDT60C	ST	2026+	TO-220	80	原装正品假一罚十!	询价
中天科工半导体（深圳）有限公司	BDT60C	ST	20+	TO-220	38560	原装优势主营型号-可开原型号增税票	询价
芯有半导体（深圳）有限公司	BDT60A	PHI	05+	原厂原装	1001	只做全新原装真实现货供应	询价
标准国际(香港)有限公司	BDT60	BDT60	25+	25	25		询价
深圳市威雅利发展有限公司	BDT60C	ST	1145+	TO-220	80	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市腾亿芯科技有限公司	BDT60A	ST	25+	TO-220	20000	原装，请咨询	询价
深圳市一线半导体有限公司	BDT60F		24+	TO-220FA	10000	全新	询价
深圳市恒创达实业有限公司	BDT60A	ST	17+	TO-220	6200		询价

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找IC，尽在114IC

BDT60晶体管资料

BDT60产品属性

BDT60供应商更多...

BDT60芯片相关品牌

BDT60规格书下载地址

BDT60参数引脚图相关

BDT60数据表相关新闻

BD9F500QUZ-E2

BE-A301

BF7612CM28，40k现货，批次21+

BF7612CM28，BYD，40K，21+

BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2

BD9328EFJ-降压型开关稳压器

DdatasheetPDF页码索引