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BDT60C晶体管资料
BDT60C别名：BDT60C三极管、BDT60C晶体管、BDT60C晶体三极管
BDT60C生产厂家：英国Mullard有限公司
BDT60C制作材料：Si-P+Darl+Di
BDT60C性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
BDT60C封装形式：直插封装
BDT60C极限工作电压：120V
BDT60C最大电流允许值：4A
BDT60C最大工作频率：>10MHZ
BDT60C引脚数：3
BDT60C最大耗散功率：50W
BDT60C放大倍数：β>750
BDT60C图片代号：B-89
BDT60Cvtest：120
BDT60Chtest：10000100
- BDT60Catest：4
BDT60Cwtest：50
BDT60C代换 BDT60C用什么型号代替：BDW54D,BDW64D,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BDT60C | PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C • 50 W at 25 °C Case Temperature • 4 A Continuous Collector Current • Minimum hFE of 750 at 1.5 V, 3 A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |   | |
BDT60C | Complement to Type BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C APPLICATIONS ·Designed for use in audi | ISC 无锡固电 | | |
BDT60C | PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A | POINN Power Innovations Ltd | | |
BDT60C | PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A | TRSYS Transys Electronics | | |
BDT60C | PNP SILICON POWER DARLINGTONS 文件：119.03 Kbytes Page：5 Pages | Bourns 伯恩斯 | | |
isc Silicon PNP Darlington Power Transistors DESCRIPTION · DC Current Gain -hFE = 750(Min)@ IC= -1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF · Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS · D | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • DC Current Gain -hFE= 750(Min)@ IC=-1.5A • Collector-Emitter Sustaining Voltage- : VCEo(sus) = -60V(Min)- BDT60F; -SOV(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF • Complement to Type BDT61F/ | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP DARL 120V 4A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | |
BDT60C产品属性
- 类型
描述
- 型号
BDT60C
- 功能描述
达林顿晶体管 50W 4A PNP
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-220 |
10000 |
全新 |
||||
ST/进口原 |
17+ |
TO-220 |
6200 |
||||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
|||
INFINEON |
24+ |
SOT-363 |
9000 |
公司现货库存,支持实单 |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
恩XP |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
恩XP |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
PHI |
1738+ |
TO-220 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
恩XP |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST/意法 |
24+ |
NA/ |
3330 |
原装现货,当天可交货,原型号开票 |
BDT60C芯片相关品牌
BDT60C规格书下载地址
BDT60C参数引脚图相关
- c901
- C80
- c62f
- c430p
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- c20001
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- c1000
- bul128a
- bul128
- bu406
- bq5
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- BDT81F(A)
- BDT81
- BDT65F
- BDT65CF
- BDT65C
- BDT65BF
- BDT65B
- BDT65AF
- BDT65A
- BDT65
- BDT64F
- BDT64CF
- BDT64C
- BDT64BF
- BDT64B
- BDT64AF
- BDT64A
- BDT64
- BDT63F
- BDT63C
- BDT63B
- BDT63A
- BDT63
- BDT62C
- BDT62B
- BDT62A
- BDT62
- BDT61F
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- BDT61C
- BDT61BF
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- BDT61A
- BDT61
- BDT60F
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- BDT60AF
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- BDT55
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- BDT52
- BDT51
- BDT42F
- BDT42CF
- BDT42C
- BDT42BF
- BDT42B
- BDT42AF
- BDT42A
- BDT42
- BDT41F
- BDT41CF
- BDT41C
- BDT41BF
- BDT41B
- BDT41AF
- BDT41A
BDT60C数据表相关新闻
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2012-11-10
DdatasheetPDF页码索引
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