BCR10晶体三极管芯片数据手册现货行情报价-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

位置：首页 > IC中文资料 > BCR10

BCR10晶体管资料

BCR108别名：BCR108三极管、BCR108晶体管、BCR108晶体三极管
BCR108生产厂家：
BCR108制作材料：Si-N+R
BCR108性质：表面帖装型（SMD）
BCR108封装形式：贴片封装
BCR108极限工作电压：50V
BCR108最大电流允许值：0.1A
BCR108最大工作频率：<1MHZ或未知
BCR108引脚数：3
BCR108最大耗散功率：
BCR108放大倍数：
BCR108图片代号：H-15
BCR108vtest：50
BCR108htest：999900
BCR108atest：0.1
BCR108wtest：0

BCR108代换 BCR108用什么型号代替：DTC123JK,KSR1113,RN1405,UN221M,

BCR10价格

参考价格：￥0.1150

型号：BCR108E6327 品牌：INF 备注：这里有BCR10多少钱，2026年最近7天走势，今日出价，今日竞价，BCR10批发/采购报价，BCR10行情走势销售排行榜，BCR10报价。

型号	功能描述	生产厂家企业	LOGO
BCR10	NPN/PNP Silicon Digital Transistor Array NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated NPN/PNP Transistors in one package • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ) • Pb-free (RoHS compliant) package • Qualified	INFINEON 英飞凌	INFINEON
BCR10	NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=10kΩ)	SIEMENS 西门子	SIEMENS
BCR10	NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit)	INFINEON 英飞凌	INFINEON
BCR101	NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ )	INFINEON 英飞凌	INFINEON
BCR101F	NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ )	INFINEON 英飞凌	INFINEON
BCR101L3	NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ )	INFINEON 英飞凌	INFINEON
BCR101T	NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ )	INFINEON 英飞凌	INFINEON
BCR103	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR103F	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR103L3	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR103T	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR103U	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa	INFINEON 英飞凌	INFINEON
BCR108	Digital Transistor Features © Epitaxial planar die construction © Builtin biasing resistors (Ry: 22k0, Ry: 47k0) © Also available in lead free version ® RoHS compliant with Halogen-free:	TECHPUBLIC 台舟电子	TECHPUBLIC
BCR108	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)	SIEMENS 西门子	SIEMENS
BCR108F	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa	INFINEON 英飞凌	INFINEON
BCR108F	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108F	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108L3	丝印代码：WH；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108L3	丝印代码：WH；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108S	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108S	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108S	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa	INFINEON 英飞凌	INFINEON
BCR108S	NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in on package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)	SIEMENS 西门子	SIEMENS
BCR108SH6327	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa	INFINEON 英飞凌	INFINEON
BCR108T	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108T	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108TE6327	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108W	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108W	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	INFINEON 英飞凌	INFINEON
BCR108W	丝印代码：WHs；NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa	INFINEON 英飞凌	INFINEON
BCR108W	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)	SIEMENS 西门子	SIEMENS
BCR10CM	Triac 10 Amperes/400-600 Volts Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: □ Glass Passivation □ Excellent Surge Capability □ Selected for Inductive Loads Applications: □ AC Switch	POWEREX	POWEREX
BCR10CM	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE • IT (RMS) 10A • VDRM 400V/600V • IFGT I, IRGT I, IRGT III 30mA (20mA) ✽5 APPLICATION Contactless AC switches, light drimmer, electric	MITSUBISHI 三菱电机	MITSUBISHI
BCR10CM-12	Triac 10 Amperes/400-600 Volts Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: □ Glass Passivation □ Excellent Surge Capability □ Selected for Inductive Loads Applications: □ AC Switch	POWEREX	POWEREX
BCR10CM-12L	Triac 10 Amperes/400-600 Volts Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: □ Glass Passivation □ Excellent Surge Capability □ Selected for Inductive Loads Applications: □ AC Switch	POWEREX	POWEREX
BCR10CM-12LA	Triac Medium Power Use Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, w	RENESAS 瑞萨	RENESAS
BCR10CM-12LA-A8	Triac Medium Power Use Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, w	RENESAS 瑞萨	RENESAS
BCR10CM-12LB	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type	RENESAS 瑞萨	RENESAS
BCR10CM-12LB-A8	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type	RENESAS 瑞萨	RENESAS
BCR10CM-16LH	800V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) • Tj: 150°C • Planar Passivation Type • High Commutation	RENESAS 瑞萨	RENESAS
BCR10CM-16LH-1BB0	800V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) • Tj: 150°C • Planar Passivation Type • High Commutation	RENESAS 瑞萨	RENESAS
BCR10CM-16LH-1BH0	800V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) • Tj: 150°C • Planar Passivation Type • High Commutation	RENESAS 瑞萨	RENESAS
BCR10CM-16LHBB0	800V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) • Tj: 150°C • Planar Passivation Type • High Commutation	RENESAS 瑞萨	RENESAS
BCR10CM-16LHBH0	800V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) • Tj: 150°C • Planar Passivation Type • High Commutation	RENESAS 瑞萨	RENESAS
BCR10CM-8	Triac 10 Amperes/400-600 Volts Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: □ Glass Passivation □ Excellent Surge Capability □ Selected for Inductive Loads Applications: □ AC Switch	POWEREX	POWEREX
BCR10CM-8L	Triac 10 Amperes/400-600 Volts Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: □ Glass Passivation □ Excellent Surge Capability □ Selected for Inductive Loads Applications: □ AC Switch	POWEREX	POWEREX
BCR10CS	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE • IT (RMS) 10A • VDRM 400V/600V • IFGT !, IRGT !, IRGT # 30mA (20mA) ✽5 APPLICATION Solid state relay, hybrid IC	POWEREX	POWEREX
BCR10CS	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE • IT (RMS) 10A • VDRM 400V/600V • IFGT !, IRGT !, IRGT # 30mA (20mA) ✽5 APPLICATION Solid state relay, hybrid IC	MITSUBISHI 三菱电机	MITSUBISHI
BCR10CS-12LA	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, r	RENESAS 瑞萨	RENESAS
BCR10CS-12LA-T11	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, r	RENESAS 瑞萨	RENESAS
BCR10CS-12LB	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • The product guaranteed maximum junction temperature of 150°C • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit,	RENESAS 瑞萨	RENESAS
BCR10CS-12LB-T11	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • The product guaranteed maximum junction temperature of 150°C • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit,	RENESAS 瑞萨	RENESAS
BCR10FM-12LB	600V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 • Insulated Type • Planar Passivation Type • Viso: 2000V	RENESAS 瑞萨	RENESAS
BCR10FM12LB1BG0	600V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 • Insulated Type • Planar Passivation Type • Viso: 2000V	RENESAS 瑞萨	RENESAS
BCR10FM-12LB-1BG0	600V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 • Insulated Type • Planar Passivation Type • Viso: 2000V	RENESAS 瑞萨	RENESAS
BCR10FM12LB1BH0	600V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 • Insulated Type • Planar Passivation Type • Viso: 2000V	RENESAS 瑞萨	RENESAS
BCR10FM-12LB-1BH0	600V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 • Insulated Type • Planar Passivation Type • Viso: 2000V	RENESAS 瑞萨	RENESAS

BCR10产品属性

类型
描述
hFEmin：
70
ICBOmax：
100 nA
Ptotmax：
200 mW
R1 / R2：
0.047
R1：
2.2 kΩ
R2：
47 kΩ
VCBOmax：
50 V
VCE(sat)max：
0.3 V
VCEOmax：
50 V
VEBOmax：
5 V
Vi (off) max：
0.8 100µA / 5V
Vi (on)max：
0.8 V
Vi (on)min：
0.5 2mA / 0.3V
Mounting：
SMT
Polarity：
NPN (Single)

BCR10供应商更多...

更新时间：2026-8-1 17:21:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	BCR108E6327	INFINEON	25+	SOT23	45000	原装正品!现货热卖!	询价
深圳市得捷芯城科技有限公司	BCR108WH6327	Infineon(英飞凌)	25+	N/A	18798	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市壹芯创科技有限公司	BCR10PN	INFINEON	23+	SOT363	60000		询价
深圳市正迈科技有限公司	BCR10LM-12LB#B00	RENESAS丨全系列供应	26+	NA	5800	原装进口ICMCUSOCMOS等知名国内外品牌只做原装全	询价
深圳市金华微盛电子有限公司	BCR10PM-8L	RENESAS	19+	TO-220F	27500		询价
中天科工半导体（深圳）有限公司	BCR10PN	INFINEON/英飞凌	25+	SOT-363	32000	INFINEON/英飞凌全新特价BCR10PN即刻询购立享优惠#长期有货	询价
深圳市坤融电子科技有限公司	BCR10PNE6327	INFINEON/英飞凌	2025+	SOT363	5000	原装进口价格优请找坤融电子!	询价
深圳深宇韬电子科技有限公司	BCR10PNH6727	HOLTEK	22+	sot	6600	正品渠道现货,终端可提供BOM表配单。	询价
深圳市易开元科技有限公司	BCR108E6327HTSA1	INFINEON	2416+	SOT23-3	6000	只要有TP支持全网最低价	询价
深圳市创新迹电子有限公司	BCR108S	Infineon	2021+		6800	原厂原装,欢迎咨询	询价

BCR10芯片相关品牌

BCR10规格书下载地址

BCR10参数引脚图相关

BCR10数据表相关新闻

BCW60D,215
进口代理
2024-11-1
BCR108SH6327XTSA1
BCR108SH6327XTSA1 三极管 INFINEON/英飞凌封装SOT363
2022-8-1
BCP68
BCP68
2020-11-3
BCV46E6327绝对有货陆续到货中
BCV46E6327 绝对有货陆续到货中
2020-10-31
BCP56-16 NXP
BCP56-16 NXP
2020-10-13
BCP56-16
BCP56-16
2020-4-10

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108
P109
P110

找IC，尽在114IC

BCR10晶体管资料

BCR10价格

BCR10产品属性

BCR10供应商更多...

BCR10芯片相关品牌

BCR10规格书下载地址

BCR10参数引脚图相关

BCR10数据表相关新闻

BCW60D,215

BCR108SH6327XTSA1

BCP68

BCV46E6327绝对有货陆续到货中

BCP56-16 NXP

BCP56-16

DdatasheetPDF页码索引