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BCR10晶体管资料

  • BCR108别名：BCR108三极管、BCR108晶体管、BCR108晶体三极管

  • BCR108生产厂家：

  • BCR108制作材料：Si-N+R

  • BCR108性质：表面帖装型 （SMD）

  • BCR108封装形式：贴片封装

  • BCR108极限工作电压：50V

  • BCR108最大电流允许值：0.1A

  • BCR108最大工作频率：<1MHZ或未知

  • BCR108引脚数：3

  • BCR108最大耗散功率：

  • BCR108放大倍数：

  • BCR108图片代号：H-15

  • BCR108vtest：50

  • BCR108htest：999900

  • BCR108atest：.1

  • BCR108wtest：0

  • BCR108代换 BCR108用什么型号代替：DTC123JK,KSR1113,RN1405,UN221M,

BCR10价格

参考价格：￥0.1150

型号：BCR108E6327 品牌：INF 备注：这里有BCR10多少钱，2024年最近7天走势，今日出价，今日竞价，BCR10批发/采购报价，BCR10行情走势销售排行榜，BCR10报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BCR10

NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)

NPN/PNPSiliconDigitalTansistorArray •Switchingcircuit,inverter,interfacecircuit,drivecircuit •Two(galvanic)internalisolatedNPN/PNPTransistorinonepackage •Builtinbiasresistor(R1=10kΩ,R2=10kΩ)

SIEMENS

Siemens Ltd

SIEMENS
BCR10

NPN/PNP Silicon Digital Transistor Array

NPN/PNPSiliconDigitalTransistorArray •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Two(galvanic)internalisolatedNPN/PNP Transistorsinonepackage •BuiltinbiasresistorNPNandPNP (R1=10kΩ,R2=10kΩ) •Pb-free(RoHScompliant)package •Qualified

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR101

NPN Silicon Digital Transistor

•Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR101F

NPN Silicon Digital Transistor

•Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR101L3

NPN Silicon Digital Transistor

•Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR101T

NPN Silicon Digital Transistor

•Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR103

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR103F

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR103L3

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR103T

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR103U

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit

•Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ)

SIEMENS

Siemens Ltd

SIEMENS
BCR108

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108F

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108F

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108F

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108L3

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108L3

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108S

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108S

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108S

NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

NPNSiliconDigitalTransistorArray •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Two(galvanic)internalisolatedTransistorsinonpackage •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ)

SIEMENS

Siemens Ltd

SIEMENS
BCR108S

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108SH6327

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108T

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108T

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108TE6327

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108W

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ)

SIEMENS

Siemens Ltd

SIEMENS
BCR108W

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108W

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR108W

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BCR10CM

MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

•IT(RMS)......................................................................10A •VDRM..............................................................400V/600V •IFGTI,IRGTI,IRGTIII.........................30mA(20mA)✽5 APPLICATION ContactlessACswitches,lightdrimmer,electric

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
BCR10CM

Triac 10 Amperes/400-600 Volts

Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch

POWEREX

POWEREX

POWEREX
BCR10CM-12

Triac 10 Amperes/400-600 Volts

Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch

POWEREX

POWEREX

POWEREX
BCR10CM-12L

Triac 10 Amperes/400-600 Volts

Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch

POWEREX

POWEREX

POWEREX
BCR10CM-12LA

Triac Medium Power Use

Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit,controlofhouseholdequipmentsuchasTVsets,stereosystems,refrigerator,w

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CM-12LA-A8

Triac Medium Power Use

Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit,controlofhouseholdequipmentsuchasTVsets,stereosystems,refrigerator,w

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CM-12LB

Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C)

Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CM-12LB-A8

Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C)

Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CM-16LH

800V - 10A - Triac

Features •IT(RMS):10A •VDRM:800V •IFGTI,IRGTI,IRGTIII:50mAor35mA(IGTitem:1) •Tj:150°C •PlanarPassivationType •HighCommutation

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CM-16LH-1BB0

800V - 10A - Triac

Features •IT(RMS):10A •VDRM:800V •IFGTI,IRGTI,IRGTIII:50mAor35mA(IGTitem:1) •Tj:150°C •PlanarPassivationType •HighCommutation

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CM-16LH-1BH0

800V - 10A - Triac

Features •IT(RMS):10A •VDRM:800V •IFGTI,IRGTI,IRGTIII:50mAor35mA(IGTitem:1) •Tj:150°C •PlanarPassivationType •HighCommutation

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CM-16LHBB0

800V - 10A - Triac

Features •IT(RMS):10A •VDRM:800V •IFGTI,IRGTI,IRGTIII:50mAor35mA(IGTitem:1) •Tj:150°C •PlanarPassivationType •HighCommutation

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CM-16LHBH0

800V - 10A - Triac

Features •IT(RMS):10A •VDRM:800V •IFGTI,IRGTI,IRGTIII:50mAor35mA(IGTitem:1) •Tj:150°C •PlanarPassivationType •HighCommutation

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CM-8

Triac 10 Amperes/400-600 Volts

Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch

POWEREX

POWEREX

POWEREX
BCR10CM-8L

Triac 10 Amperes/400-600 Volts

Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch

POWEREX

POWEREX

POWEREX
BCR10CS

MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

•IT(RMS)......................................................................10A •VDRM..............................................................400V/600V •IFGT!,IRGT!,IRGT#.........................30mA(20mA)✽5 APPLICATION Solidstaterelay,hybridIC

MitsubishiMITSUBISHI electlic

三菱电机

Mitsubishi
BCR10CS

MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

•IT(RMS)......................................................................10A •VDRM..............................................................400V/600V •IFGT!,IRGT!,IRGT#.........................30mA(20mA)✽5 APPLICATION Solidstaterelay,hybridIC

POWEREX

POWEREX

POWEREX
BCR10CS-12LA

Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C)

Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit,controlofhouseholdequipmentsuchasTVsets,stereosystems,r

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CS-12LA-T11

Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C)

Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit,controlofhouseholdequipmentsuchasTVsets,stereosystems,r

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CS-12LB

Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C)

Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Theproductguaranteedmaximumjunctiontemperatureof150°C •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10CS-12LB-T11

Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C)

Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Theproductguaranteedmaximumjunctiontemperatureof150°C •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10FM-12LB

600V - 10A - Triac

Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10FM12LB1BG0

600V - 10A - Triac

Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10FM-12LB-1BG0

600V - 10A - Triac

Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10FM12LB1BH0

600V - 10A - Triac

Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10FM-12LB-1BH0

600V - 10A - Triac

Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10FM-12LBBB0

600V - 10A - Triac

Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BCR10FM-12LBBG0

600V - 10A - Triac

Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BCR10产品属性

  • 类型

    描述

  • 型号

    BCR10

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    NPN/PNP Silicon Digital Tansistor Array(Switching circuit, inverter, interface circuit, drive circuit)

BCR10供应商更多...

更新时间：2024-4-19 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市纳艾斯科技有限公司
BCR1002N3
CYSTEKE
2020+
SOT-23
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市威雅利发展有限公司
BCR1002N3
CYSTEKE
15+
SOT-23
220
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市航宇科工半导体有限公司
BCR108E6327
INFINEON/英飞凌
21+
SOT363
431
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
深圳市航润创能电子集团有限公司
BCR1002N3
CYSTEKE
21+
SOT-23
220
原装现货假一赔十
询价
深圳市高捷芯城科技有限公司
BCR10PNH6327
Infineon(英飞凌)
23+
SOT-363-6(SC-70-6)
3022
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市振宏微科技有限公司
BCR108
Infineon(英飞凌)
23+
NA
7000
原装正品!假一罚十!
询价
深圳市拓亿芯电子有限公司
BCR1002N3
CYSTEKE
23+
SOT23-3
15000
全新原装现货,价格优势
询价
深圳市振鑫微电子科技有限公司
BCR108SH6327
INFINEON
23+
N/A
50000
全新原装现货热卖
询价
深圳市汇莱威科技有限公司
BCR108W
INFINEON/英飞凌
SOT323
7906200
询价
瀚佳科技(深圳)有限公司
BCR100B-10
MITSUBISHI
18+
MODULE
2050
公司大量全新原装 正品 随时可以发货
询价

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