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BCR10晶体管资料

BCR108别名：BCR108三极管、BCR108晶体管、BCR108晶体三极管
BCR108生产厂家：
BCR108制作材料：Si-N+R
BCR108性质：表面帖装型（SMD）
BCR108封装形式：贴片封装
BCR108极限工作电压：50V
BCR108最大电流允许值：0.1A
BCR108最大工作频率：<1MHZ或未知
BCR108引脚数：3
BCR108最大耗散功率：
BCR108放大倍数：
BCR108图片代号：H-15
BCR108vtest：50
BCR108htest：999900
BCR108atest：0.1
BCR108wtest：0

BCR108代换 BCR108用什么型号代替：DTC123JK,KSR1113,RN1405,UN221M,

BCR10价格

参考价格：￥0.1150

型号：BCR108E6327 品牌：INF 备注：这里有BCR10多少钱，2025年最近7天走势，今日出价，今日竞价，BCR10批发/采购报价，BCR10行情走势销售排行榜，BCR10报价。

型号	功能描述	生产厂家企业	LOGO
BCR10	NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=10kΩ)	SIEMENS 西门子	SIEMENS
BCR10	NPN/PNP Silicon Digital Transistor Array NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated NPN/PNP Transistors in one package • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ) • Pb-free (RoHS compliant) package • Qualified	Infineon 英飞凌	Infineon
BCR10	NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit)	Infineon 英飞凌	Infineon
BCR101	NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ )	Infineon 英飞凌	Infineon
BCR101F	NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ )	Infineon 英飞凌	Infineon
BCR101L3	NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ )	Infineon 英飞凌	Infineon
BCR101T	NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ )	Infineon 英飞凌	Infineon
BCR103	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR103F	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR103L3	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR103T	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR103U	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)	SIEMENS 西门子	SIEMENS
BCR108	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa	Infineon 英飞凌	Infineon
BCR108F	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa	Infineon 英飞凌	Infineon
BCR108F	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108F	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108L3	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108L3	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108S	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108S	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108S	NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in on package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)	SIEMENS 西门子	SIEMENS
BCR108S	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa	Infineon 英飞凌	Infineon
BCR108SH6327	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa	Infineon 英飞凌	Infineon
BCR108T	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108T	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108TE6327	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108W	NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)	SIEMENS 西门子	SIEMENS
BCR108W	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108W	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package	Infineon 英飞凌	Infineon
BCR108W	NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa	Infineon 英飞凌	Infineon
BCR10CM	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE • IT (RMS) ...................................................................... 10A • VDRM ..............................................................400V/600V • IFGT I, IRGT I, IRGT III ......................... 30mA (20mA) ✽5 APPLICATION Contactless AC switches, light drimmer, electric	Mitsubishi 三菱电机	Mitsubishi
BCR10CM	Triac 10 Amperes/400-600 Volts Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: □ Glass Passivation □ Excellent Surge Capability □ Selected for Inductive Loads Applications: □ AC Switch	POWEREX	POWEREX
BCR10CM-12	Triac 10 Amperes/400-600 Volts Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: □ Glass Passivation □ Excellent Surge Capability □ Selected for Inductive Loads Applications: □ AC Switch	POWEREX	POWEREX
BCR10CM-12L	Triac 10 Amperes/400-600 Volts Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: □ Glass Passivation □ Excellent Surge Capability □ Selected for Inductive Loads Applications: □ AC Switch	POWEREX	POWEREX
BCR10CM-12LA	Triac Medium Power Use Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, w	RENESAS 瑞萨	RENESAS
BCR10CM-12LA-A8	Triac Medium Power Use Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, w	RENESAS 瑞萨	RENESAS
BCR10CM-12LB	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type	RENESAS 瑞萨	RENESAS
BCR10CM-12LB-A8	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type	RENESAS 瑞萨	RENESAS
BCR10CM-16LH	800V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) • Tj: 150°C • Planar Passivation Type • High Commutation	RENESAS 瑞萨	RENESAS
BCR10CM-16LH-1BB0	800V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) • Tj: 150°C • Planar Passivation Type • High Commutation	RENESAS 瑞萨	RENESAS
BCR10CM-16LH-1BH0	800V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) • Tj: 150°C • Planar Passivation Type • High Commutation	RENESAS 瑞萨	RENESAS
BCR10CM-16LHBB0	800V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) • Tj: 150°C • Planar Passivation Type • High Commutation	RENESAS 瑞萨	RENESAS
BCR10CM-16LHBH0	800V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III: 50 mA or 35 mA(IGT item:1) • Tj: 150°C • Planar Passivation Type • High Commutation	RENESAS 瑞萨	RENESAS
BCR10CM-8	Triac 10 Amperes/400-600 Volts Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: □ Glass Passivation □ Excellent Surge Capability □ Selected for Inductive Loads Applications: □ AC Switch	POWEREX	POWEREX
BCR10CM-8L	Triac 10 Amperes/400-600 Volts Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: □ Glass Passivation □ Excellent Surge Capability □ Selected for Inductive Loads Applications: □ AC Switch	POWEREX	POWEREX
BCR10CS	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE • IT (RMS) ...................................................................... 10A • VDRM ..............................................................400V/600V • IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) ✽5 APPLICATION Solid state relay, hybrid IC	Mitsubishi 三菱电机	Mitsubishi
BCR10CS	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE • IT (RMS) ...................................................................... 10A • VDRM ..............................................................400V/600V • IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) ✽5 APPLICATION Solid state relay, hybrid IC	POWEREX	POWEREX
BCR10CS-12LA	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, r	RENESAS 瑞萨	RENESAS
BCR10CS-12LA-T11	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, r	RENESAS 瑞萨	RENESAS
BCR10CS-12LB	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • The product guaranteed maximum junction temperature of 150°C • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit,	RENESAS 瑞萨	RENESAS
BCR10CS-12LB-T11	Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features • IT (RMS) : 10 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • The product guaranteed maximum junction temperature of 150°C • Non-Insulated Type • Planar Passivation Type Applications Contactless AC switch, light dimmer, electronic flasher unit,	RENESAS 瑞萨	RENESAS
BCR10FM-12LB	600V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 • Insulated Type • Planar Passivation Type • Viso: 2000V	RENESAS 瑞萨	RENESAS
BCR10FM12LB1BG0	600V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 • Insulated Type • Planar Passivation Type • Viso: 2000V	RENESAS 瑞萨	RENESAS
BCR10FM-12LB-1BG0	600V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 • Insulated Type • Planar Passivation Type • Viso: 2000V	RENESAS 瑞萨	RENESAS
BCR10FM12LB1BH0	600V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 • Insulated Type • Planar Passivation Type • Viso: 2000V	RENESAS 瑞萨	RENESAS
BCR10FM-12LB-1BH0	600V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 • Insulated Type • Planar Passivation Type • Viso: 2000V	RENESAS 瑞萨	RENESAS
BCR10FM-12LBBB0	600V - 10A - Triac Features • IT (RMS) : 10 A • VDRM : 600 V • Tj: 150 °C • IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 • Insulated Type • Planar Passivation Type • Viso: 2000V	RENESAS 瑞萨	RENESAS

BCR10产品属性

类型
描述
型号
BCR10
制造商
INFINEON
制造商全称
Infineon Technologies AG
功能描述
NPN/PNP Silicon Digital Tansistor Array(Switching circuit, inverter, interface circuit, drive circuit)

BCR10供应商更多...

更新时间：2025-11-19 11:16:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	BCR10PNE6327	INFINEON/英飞凌	2025+	SOT363	5000	原装进口价格优请找坤融电子!	询价
深圳市天芯威科技有限公司	BCR10PNH6327XTSA1	Infineon(英飞凌)	23+		25650	新到现货,只做原装进口	询价
深圳市拓亿芯电子有限公司	BCR1002N3	CYSTEKE	25+	SOT23-3	15000	全新原装现货,价格优势	询价
深圳市纳艾斯科技有限公司	BCR1002N3	CYSTEKE	24+	SOT-23	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
贸泽芯城（深圳）电子科技有限公司	BCR10PNH6327	Infineon(英飞凌)	23+	N/A	12000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市煦洪科技有限公司	BCR101L3E6327	Infineon/英飞凌	25+	原厂封装	10280	原厂授权代理,专注军工、汽车、医疗、工业、新能源！	询价
深圳市亿智腾科技有限公司	BCR101L3E6327	Infineon Technologies	24+	原装	5000	原装正品,提供BOM配单服务	询价
深圳市安富世纪电子有限公司	BCR10	INFINEON	23+		8000	只做原装现货	询价
深圳市科恒伟业电子有限公司	BCR108SH6327	INFINEON	2450+	SOT-363	8850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市宏捷佳电子科技有限公司	BCR101L3E6327	Infineon Technologies	25+	SC-101 SOT-883	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价

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BCR10参数引脚图相关

BCR10数据表相关新闻

BCW60D,215

BCR108SH6327XTSA1

BCP68

BCV46E6327绝对有货陆续到货中

BCP56-16 NXP

BCP56-16

DdatasheetPDF页码索引