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型号 功能描述 生产厂家 企业 LOGO 操作
BCR101F

NPN Silicon Digital Transistor

• Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ )

INFINEON

英飞凌

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

MOSPEC

统懋

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

MOTOROLA

摩托罗拉

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

NEC

瑞萨

Operational Amplifiers

文件:509.25 Kbytes Page:17 Pages

NSC

国半

Operational Amplifiers

文件:509.25 Kbytes Page:17 Pages

NSC

国半

BCR101F产品属性

  • 类型

    描述

  • 型号

    BCR101F

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    NPN Silicon Digital Transistor

更新时间:2026-8-1 16:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon
25+
SOT0402
3200
全新原装、诚信经营、公司现货销售
INFINEON
23+
SOT0402
8000
只做原装现货
INFINEON
23+
SOT0402
7000

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