NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage

NPNSiliconDigitalTransistor

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CustomerSpecification

Construction Diameters(In) 1)Component18X1COND a)Conductor24(19/36)AWGBareCopper0.025 b)Insulation0.011Wall,Nom.PVC,SemiRigid0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8Componen

CustomerSpecification

Construction Diameters(In) 1)Component18X1COND a)Conductor24(19/36)AWGBareCopper0.025 b)Insulation0.011Wall,Nom.PVC,SemiRigid0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8Componen

D챕tailscompletssurlesitedufabricant:

IDEAL#103(103) Descriptionduproduit Détailscompletssurlesitedufabricant: IDEALINDUSTRIES,INC

0.1/2.5GHzSiMMICBUFFERAMPLIFIERS

DESCRIPTION TheSTB7102,STB7103andSTB7104designedforMobilePhoneapplications(0.1/2.5GHz),areanhighisolationSiMMICBufferAmplifiers.ManufacturedinthethirdgenerationofSTproprietarybipolarprocess,theyoffersanexcellentisolationandagoodlinearityusingalowcurrentco

Smooth,hightorque,rollerratchethandle

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