丝印代码：WHs；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

丝印代码：WHs；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

丝印代码：WHs；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa

NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in on package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)

AF 数字晶体管

NPN硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR108S：两个内部隔离的晶体管，在一个多芯片封装中具有良好的匹配性\n• 无铅（符合 RoHS 标准）封装1）\n• 符合 AEC Q101 要求;

丝印代码：WHs；NPN Silicon Digital Transistor

文件：873.25 Kbytes Page：11 Pages

丝印代码：WHs；NPN Silicon Digital Transistor

文件：211.61 Kbytes Page：12 Pages

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa

200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages