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位置：首页 > IC中文资料第9873页 > AS7C31026B

AS7C31026B价格

参考价格：￥13.3160

型号：AS7C31026B-10JCN 品牌：Alliance Memory 备注：这里有AS7C31026B多少钱，2026年最近7天走势，今日出价，今日竞价，AS7C31026B批发/采购报价，AS7C31026B行情走势销售排行榜，AS7C31026B报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AS7C31026B

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B

3.3 V 64K X 16 CMOS SRAM

Functional description\nThe AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.\nEqual address access and cycle • Industrial and commercial versions\n• Organization: 65,536 words × 16 bits\n• Center power and ground pins for low noise\n• High speed\n   - 10/12/15/20 ns address access time\n   - 5, 6, 7, 8 ns output enable access time\n• Low power consumption: ACTIVE\n   - 288 mW / max @ 10 ns\n• Low power con;

AllianceMemory

AS7C31026B-10JC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-10JCN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-10JI

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-10JIN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-10TC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-10TCN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-10TI

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-10TIN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-12JC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-12JCN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-12JI

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-12JIN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-12TC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-12TCN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-12TI

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-12TIN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-15JC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-15JCN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-15JI

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-15JIN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-15TC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-15TCN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-15TI

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-15TIN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-20JC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-20JCN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-20JI

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-20JIN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-20TC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-20TCN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-20TI

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-20TIN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-10JCNTR

封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 44SOJ 集成电路（IC） 存储器

ALLIANCE

AS7C31026B-10JIN

封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：1M FAST NEW 64K X 16 3.3V INDUST 集成电路（IC） 存储器

ALLIANCE

AS7C31026B-10TCN

3.3 V 64K x 16 CMOS SRAM

AllianceMemory

AS7C31026B-12JCN

3.3 V 64K x 16 CMOS SRAM

AllianceMemory

AS7C31026

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

AS7C31026

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

AS7C31026A

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

AS7C31026C

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026C is a 3V high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial (-

ALSC

AS7C31026B产品属性

  • 类型

    描述

  • 型号

    AS7C31026B

  • 制造商

    ALSC

  • 制造商全称

    Alliance Semiconductor Corporation

  • 功能描述

    3.3 V 64K X 16 CMOS SRAM

AS7C31026B供应商更多...

更新时间：2026-8-2 10:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市东来宝电子科技有限公司
AS7C31026B-20TCNIC
ALLIANC
24+
TSOP44
43200
郑重承诺只做原装进口现货
询价
深圳市壹芯创科技有限公司
AS7C31026B-12JCN
ALLIANCE
22+
SOJ44
8200
原装现货库存.价格优势!!
询价
深圳市宇创芯科技有限公司
AS7C31026B-20TCN
ALLIANC
24+
TSOP44
9600
原装现货,优势供应,支持实单!
询价
现代芯城（深圳）科技有限公司
AS7C31026B-20TIN
26+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
询价
惠芯易购（深圳）科技有限公司
AS7C31026B-20TCNIC
ALLIANC
11+
TSOP44
2980
只做原装正品
询价
深圳市华睿芯科技有限公司
AS7C31026B-10TCN
ALLIANCE
24+
TSOP
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市芯为科技有限公司
AS7C31026B-20JCNTR
alliancememory
25+
44SOJ
8000
公司现货,提供样品技术
询价
贸泽芯城（深圳）电子科技有限公司
AS7C31026B-15TCNTR
ALLIANCE
23+
TSOP-44
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
深圳市冠亿通科技有限公司
AS7C31026B-10TCN
Alliance Memory, Inc.
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
询价
深圳市能元时代电子有限公司
AS7C31026B-12TIN
ALLIANCE
23+
TSSOP
12800
公司只有原装 欢迎来电咨询。
询价

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