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AS7C31026价格

参考价格:¥54.3738

型号:AS7C31026-10TC 品牌:Alliance Semi 备注:这里有AS7C31026多少钱,2026年最近7天走势,今日出价,今日竞价,AS7C31026批发/采购报价,AS7C31026行情走势销售排行榜,AS7C31026报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AS7C31026

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

AS7C31026

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

ALSC

AS7C31026产品属性

  • 类型

    描述

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 异步

  • 存储容量:

    1Mb (64K x 16)

  • 写周期时间 - 字,页:

    10ns

  • 访问时间:

    10ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    3 V ~ 3.6 V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    48-LFBGA

  • 供应商器件封装:

    48-BGA(7x7)

更新时间:2026-8-2 14:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
TSOP
64
SMD
2450+
SMD
9850
只做原装正品现货或订货假一赔十!
Alliance Memory, Inc.
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
ALLIANCE
22+
SOJ44
8200
原装现货库存.价格优势!!
ALLIANCE
26+
SOP44
99680
只做原装,欢迎来电资询
ALLIANCE
08+
TSOP
4113
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ALLIANC
11+
TSOP44
2980
只做原装正品
ALLIANCE
99+
TSSOP
1018
原装现货海量库存欢迎咨询
ALLIANC
2223+
TSOP44
26800
只做原装正品假一赔十为客户做到零风险
ALLIANCE
2025+
TSOP-44
5000
原装进口价格优 请找坤融电子!

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