3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026C is a 3V high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial (-

封装/外壳：48-LFBGA 包装：托盘托盘 描述：IC SRAM 1MBIT PARALLEL 48BGA 集成电路（IC） 存储器

IC SRAM 2M PARALLEL 44TSOP II

3.3 V 64K x 16 CMOS SRAM

封装/外壳：48-LFBGA 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 48BGA 集成电路（IC） 存储器

3.3 V 64K x 16 CMOS SRAM

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

5V/3.3V 64K X 16 CMOS SRAM

Functional description The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal addre

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and