3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

封装/外壳：44-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：1M FAST NEW 64K X 16 3.3V INDUST 集成电路（IC） 存储器

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and