Functional description

The AS7C31026C is a 3V high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

Features

• Industrial (-40° to 85°C) temperature

• Organization: 65,536 words × 16 bits

• Center power and ground pins for low noise

• High speed

- 10 ns address access time

- 5 ns output enable access time

• Low power consumption via chip deselect

• Upper and Lower byte pin

• Easy memory expansion with CE, OE inputs

• TTL-compatible, three-state I/O

• JEDEC standard packaging

- 44-pin 400 mil SOJ

- 44-pin TSOP 2-400

- 48-ball 6 × 8 mm BGA

• ESD protection ≥ 2000 volts