型号 功能描述 生产厂家 企业 LOGO 操作
AS7C31026B-20TCN

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-20TCN

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 1MBIT PARALLEL 44TSOP2 集成电路(IC) 存储器

Alliance

AS7C31026B-20TCN

3.3 V 64K x 16 CMOS SRAM

ETC

知名厂家

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 1MBIT PARALLEL 44TSOP2 集成电路(IC) 存储器

Alliance

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

3.3 V 64K X 16 CMOS SRAM

Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

ALSC

AS7C31026B-20TCN产品属性

  • 类型

    描述

  • 型号

    AS7C31026B-20TCN

  • 功能描述

    静态随机存取存储器 1M, 3.3V, 20ns, FAST 64K x 16 Asynch 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-11-21 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ALLIANC
24+
NA/
6230
原装现货,当天可交货,原型号开票
ALLIANC
25+
TSOP44
3090
原装正品,欢迎来电咨询!
Allianc
23+
NA
10726
专做原装正品,假一罚百!
Alliance Memory
24+
SOJ32
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ALLIANC
2223+
TSOP44
26800
只做原装正品假一赔十为客户做到零风险
ALLIANCE
25+
4185
原厂原装,价格优势
ALLIANC
24+
TSOP44
43200
郑重承诺只做原装进口现货
ALLIANC
2023+
TSOP44
2980
原厂全新正品旗舰店优势现货
Alliance Memory Inc.
22+
44TSOP2 (10.2x18.4)
9000
原厂渠道,现货配单
ALLIANC
24+
TSOP44
9600
原装现货,优势供应,支持实单!

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