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APT80价格
参考价格：￥237.0761
型号：APT8020B2LLG 品牌：Microsemi 备注：这里有APT80多少钱，2025年最近7天走势，今日出价，今日竞价，APT80批发/采购报价，APT80行情走势销售排行榜，APT80报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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isc N-Channel MOSFET Transistor DESCRIPTION ·DrainCurrent:ID=12.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology |  | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | | | |
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainCurrent-ID=51A@TC=25℃ ·DrainSourceVoltage -VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.125Ω(Max)@VGS=10V APPLICATIONS ·DC-DCconverter ·BatteryChargers ·Highspeedpowerswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon | ADPOW Advanced Power Technology | | | |
N-Channel MOSFET DESCRIPTION ·DrainCurrent-ID=42A@TC=25℃ ·DrainSourceVoltage -VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V APPLICATIONS ·DC-DCconverter ·BatteryChargers ·Highspeedpowerswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi | ADPOW Advanced Power Technology | | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery | ADPOW Advanced Power Technology | | | |
N-Channel MOSFET DESCRIPTION ·DrainCurrent-ID=44A@TC=25℃ ·DrainSourceVoltage -VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=150mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCconverter ·BatteryChargers ·Highspeedpowerswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi | ADPOW Advanced Power Technology | | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •TO-2 | ADPOW Advanced Power Technology | | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •TO-2 | ADPOW Advanced Power Technology | | | |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWERMOSIV® SINGLEDIEISOTOP®PACKAGE N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | | | |
POWER MOS V FREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. | ADPOW Advanced Power Technology | | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •TO-2 | ADPOW Advanced Power Technology | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=7.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=8.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=6.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit | ADPOW Advanced Power Technology | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit | ADPOW Advanced Power Technology | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=38A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwithexceptionall | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=31A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon | ADPOW Advanced Power Technology | | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •T-MAX™orTO-264P | ADPOW Advanced Power Technology | | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Iden | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwithexceptionall | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwithexceptionall | ADPOW Advanced Power Technology | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=31A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon | ADPOW Advanced Power Technology | | |
APT80产品属性
- 类型
描述
- 型号
APT80
- 制造商
EMINENCE
- 功能描述
TWEETER 600W 8R
- 制造商
EMINENCE
- 功能描述
TWEETER, 600W, 8R
- 制造商
EMINENCE
- 功能描述
TWEETER, 600W, 8R; Transducer
- Function
Tweeter; Power Rating
- RMS
45W;
- Impedance
8ohm;
- Sensitivity(dB)
105dB; Resonant
- Frequency
250Hz; Frequency Response
- Min
3.5kHz; Frequency Response
- Max
20kHz; External
- Height
87mm; External
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
23+ |
MODULE |
7300 |
专注配单,只做原装进口现货 |
|||
ADPOW |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
MICROCHIP(美国微芯) |
23+ |
- |
7087 |
原装现货,免费送样,可开原型号税票。提供技术支持 |
|||
APT |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
MICROCHIP(美国微芯) |
24+ |
ISOTOP |
541200 |
免费送样原盒原包现货一手渠道联系 |
|||
APT |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
24+ |
8866 |
||||||
MICROCHIP(美国微芯) |
24+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
APT80芯片相关品牌
APT80规格书下载地址
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APT80数据表相关新闻
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2023-2-27APT32F101H6S6
APT32F101H6S6，全新原装现货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.
2021-3-12APT60GF120JRDQ3
制造商零件编号APT60GF120JRDQ3 ManufacturerOrOEMMicrosemiCorporation 描述IGBT1200V149A625WSOT227 说明IGBTModuleNPT单路1200V149A625W底座安装ISOTOP? 对无铅/(RoHS)规范的达标情况无铅/符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL）1（无限） 最低订购数量1 标准包装1
2020-12-11APT50M60JVR 假一罚十
进口原装正品，欢迎咨询。
2020-6-29APT8020JFLL
APT8020JFLL，全新原装当天发货或门市自取0755-82732291.
2019-3-5
DdatasheetPDF页码索引
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