Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 38A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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N-Channel MOSFET

ROHS

6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8020 and MOC8021 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. The chip to Pin 6 base connection has been eliminated to improve the device’s output performance in higher noise environments. • No Base Connec

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

Matchable Pairs - Emitter and Detector

DESCRIPTION The TCST1103, TCST1202, and TCST1300 are transmissive sensors that include an infrared emitter and phototransistor, located face-to-face on the optical axes in a leaded package which blocks visible light. These part numbers include options for aperture width. FEATURES • Package typ

Dual smart card interface

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Dual smart card interface

文件：114.47 Kbytes Page：24 Pages