Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-2

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-2

POWER MOS V FREDFET

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-2

MOSFET

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：158.42 Kbytes Page：4 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：158.42 Kbytes Page：4 Pages

5 V, Rail-to-Rail, High-Output Current, xDSL Line Drive Amplifier

PRODUCT DESCRIPTION The AD8018 is intended for use in single-supply (5 V) xDSL modems where high-output current and low distortion are essential to achieve maximum reach. The dual high-speed amplifiers are capable of driving low distortion signals to within 0.5 V of the power supply rail. F

5 V, Rail-to-Rail, High-Output Current, xDSL Line Drive Amplifier

PRODUCT DESCRIPTION The AD8018 is intended for use in single-supply (5 V) xDSL modems where high-output current and low distortion are essential to achieve maximum reach. The dual high-speed amplifiers are capable of driving low distortion signals to within 0.5 V of the power supply rail. F

1.8-volt 2-channel step-up, step-down, or inverting DC-DC converter control IC

■ Overview The AN8018SA is a two-channel PWM DC-DC converter control IC that features low-voltage operation. This IC can obtain the step-up, step-down and inverting voltages with a small number of external components. The minimum operating voltage is as low as 1.8 V so that it can operate with

1.8-volt 2-channel step-up, step-down, or inverting DC-DC converter control IC

■ Overview The AN8018SA is a two-channel PWM DC-DC converter control IC that features low-voltage operation. This IC can obtain the step-up, step-down and inverting voltages with a small number of external components. The minimum operating voltage is as low as 1.8 V so that it can operate with

UHF Lineat Amplifier

400 mW, 18.5 dB 40–1000 MHz LINEAR AMPLIFIERS Designed for linear amplifier applications in 50 ohm systems requiring wide bandwidth, low noise, and low distortion. Internal DC blocking on RF ports reduces external component count and related circuit area. This hybrid utilizes push–pull circui