Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 44A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 150mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High speed power switch

FREDFETs

ROHS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：74.23 Kbytes Page：4 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：74.23 Kbytes Page：4 Pages

MOSFET

Wideband/Differential Output Transimpedance Amplifier

PRODUCT DESCRIPTION The AD8015 is a wide bandwidth, single supply transimpedance amplifier optimized for use in a fiber optic receiver circuit. FEATURES Low Cost, Wide Bandwidth, Low Noise Bandwidth: 240 MHz Pulse Width Modulation: 500 ps Rise Time/Fall Time: 1.5 ns

UHF Lineat Amplifier

400 mW, 18.5 dB 40–1000 MHz LINEAR AMPLIFIERS Designed for linear amplifier applications in 50 ohm systems requiring wide bandwidth, low noise, and low distortion. Internal DC blocking on RF ports reduces external component count and related circuit area. This hybrid utilizes push–pull circui

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

1.25 Gigabit/sec 16x16 Digital ECL Crosspoint Switch

The TQ8015 is a non-blocking 16 x 16 digital crosspoint switch capable of data rates greater than 1.25 Gigabits per second per port. Utilizing a fully differential internal data path and ECL I/O, the TQ8015 offers a high data rate with exceptional signal fidelity. The symmetrical switching and noi

Single-channel step-down, step-up, or inverting use DC-DC converter control IC

文件：131.95 Kbytes Page：14 Pages