位置：首页 > IC中文资料第8208页 > APT8024B2VFR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT8024B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-264 P | ADPOW |   | |
APT8024B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：140.69 Kbytes Page：4 Pages | ADPOW | | |
APT8024B2VFR | POWER MOS V 800V 33A 0.240 Ohm | APT 晶科电子 | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：140.69 Kbytes Page：4 Pages | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionall | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden | ADPOW | | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 文件：163.83 Kbytes Page：5 Pages | ADPOW | |
APT8024B2VFR产品属性
- 类型
描述
- 型号
APT8024B2VFR
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
25+ |
模块 |
9630 |
我们只做原装正品现货!量大价优! |
|||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
APT |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
JINGDAO/晶导微 |
23+ |
SOD123 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
APT |
23+ |
T-MAXB2 |
8400 |
专注配单,只做原装进口现货 |
|||
APT |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
APT |
23+ |
模块 |
420 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
APT |
24+ |
28 |
|||||
Microsemi |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
APT |
25+ |
模块 |
90000 |
一级代理商进口原装现货、价格合理 |
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APT8024B2VFR规格书下载地址
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DdatasheetPDF页码索引
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