Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses a

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses a

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current -ID= 51A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.125Ω(Max)@VGS= 10V APPLICATIONS ·DC-DC converter ·Battery Chargers ·High speed power switch

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：112.27 Kbytes Page：5 Pages

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：112.27 Kbytes Page：5 Pages

T1/CEPT Extended Temperature Range SMD Dual Line Interface Module

Units matched to leading transceiver ICs. Meet requirements for T1, E1, CEPT and PRI ISDN over extended temperature range –40 to +85˚C.

RovNav 5 LBL Transceiver

Description RovNav 5 is a highly configurable, tri-band acoustic transceiver designed to support a family of remote transducers operating in the LF, MF and EHF frequency bands. Key Features • MF, EHF and LF frequencies supported in one bottle • Auto-sensing of Remote Transducers. Tra

Bus Bar Wire, #12 Sol TC

Product Description Bus Bar Wire, 12AWG (Solid) Tinned Copper, QQ-W-343G

low-loss, compact, and economical surface-acoustic-wave (SAW) RF filter

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RF filter

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