N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specificatio

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 85A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Enhancement Mode Field Effect Transistor

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS=20V(Min) • Static Drain-Source On-Resistance : RDS(on) =18mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications). AO

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=20V,ID=45A,RDS(ON)

N-Channel MOSFET uses advanced SGT technology

Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=40A,RDS(ON)

100V N-Channel MOSFET

General Description The AOD4124 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpo

N-channel Enhancement Mode Power MOSFET

Features VDS= 100V, ID= 40 A RDS(ON)

isc N-Channel MOSFET Transistor

• FEATURES • With TO-252(DPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Load switching • General purpose applications • Switching a

N-Channel MOSFET

Application « Reverse Battery protection » Load switch Power management PWM Application

100V N-Channel MOSFET

General Description The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purp

N-Channel MOSFET uses advanced SGT technology

Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=36A,RDS(ON)

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 43A@ TC=25℃ • Drain Source Voltage- : VDSS=100V(Min) • Static Drain-Source On-Resistance : RDS(on) =24mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 60A@ TC=25℃ • Drain Source Voltage- : VDSS=25V(Min) • Static Drain-Source On-Resistance : RDS(on) =4.0mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. The device can also be used in PWM, load switching and general purpose ap

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specificatio

N-Channel Enhancement Mode Field Effect Transistor

文件：179.34 Kbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：179.34 Kbytes Page：6 Pages

MOSFET：N-Channel

中压MOSFET (40V - 400V)

N-Channel Enhancement Mode Field Effect Transistor

文件：149.85 Kbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：149.85 Kbytes Page：6 Pages

Detectable Buried Barricade Tapes 400 Series

文件：53.73 Kbytes Page：2 Pages

ESTABLISHED RELIABILITY TO-5 RELAYS

文件：142.57 Kbytes Page：6 Pages

DC axial compact fan

文件：311.38 Kbytes Page：4 Pages

DC axial fans

文件：375.69 Kbytes Page：3 Pages

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

文件：597.06 Kbytes Page：3 Pages