isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 43A@ TC=25℃ • Drain Source Voltage- : VDSS=100V(Min) • Static Drain-Source On-Resistance : RDS(on) =24mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel MOSFET uses advanced SGT technology

Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=36A,RDS(ON)

100V N-Channel MOSFET

General Description The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purp

N-Channel MOSFET

Application « Reverse Battery protection » Load switch Power management PWM Application

中压MOSFET (40V - 400V)

High Linearity Quad MOSFET Mixer for DCS 1800 BTS

Product Description The PE4126 is a high linearity, passive Quad MOSFET Mixer for DCS 1800 Base Station Receivers exhibiting high dynamic range performance over a broad LO drive range up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interfaces for the RF and L

HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS

DESCRIPTION UTC 4126 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed

MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC 4126D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4126D is suitable for commonly power amplifier circuit, electronic ballasts and energy-saving light etc. FEAT

Nylon Wire Harness Clamps

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Nylon Wire Harness Clamps

文件：109.24 Kbytes Page：1 Pages