N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications). AO

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS=20V(Min) • Static Drain-Source On-Resistance : RDS(on) =18mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=20V,ID=45A,RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

文件：179.34 Kbytes Page：6 Pages

MOSFET：N-Channel

N-Channel Enhancement Mode Field Effect Transistor

文件：179.34 Kbytes Page：6 Pages

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

Features • 0 to 100 adjustability. • Voltage programmable. • Voltage monitor. • Remote on/off control. • EMI/RFI shielding. • Short circuit, reverse polarity protection. • Arc protection.

Adafruit CharliePlex LED Matrix Bonnet - 8x16 Green LEDs

文件：616.12 Kbytes Page：2 Pages

Relampable Socket

文件：93.86 Kbytes Page：1 Pages

Small size, heavy contact load, capable of standing strong current of 45A at 14VDC.

文件：900.11 Kbytes Page：1 Pages

Both European 11mm pole distance and American 8mm pole distance available

文件：900.11 Kbytes Page：1 Pages