| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOD4120 | N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications). AO | AOSMD 万国半导体 | ||
AOD4120 | 丝印代码:DPAK;isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS=20V(Min) • Static Drain-Source On-Resistance : RDS(on) =18mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot | ISC 无锡固电 | ||
AOD4120 | N-Channel MOSFET uses advanced trench technology Description: This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features: 1) VDS=20V,ID=45A,RDS(ON) | DOINGTER 杜因特 | ||
AOD4120 | MOSFET:N-Channel AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi | AOS 美国万代 | ||
AOD4120 | N-Channel Enhancement Mode Field Effect Transistor 文件:179.34 Kbytes Page:6 Pages | AOSMD 万国半导体 | ||
N-Channel Enhancement Mode Field Effect Transistor 文件:179.34 Kbytes Page:6 Pages | AOSMD 万国半导体 | |||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V | PANASONIC 松下 | |||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V | PANASONIC 松下 | |||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy | PANASONIC 松下 | |||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy | PANASONIC 松下 | |||
Precision Micropower Low Dropout Voltage Reference 文件:289.51 Kbytes Page:11 Pages | NSC 国半 |
AOD4120产品属性
- 类型
描述
- Status:
Last Time Buy
- Package:
TO252
- Configuration:
Single - N
- Vds/V:
20
- Vgs/V:
16
- Id(A)(25℃):
25
- Id(A)(75℃):
23
- Pd(W)(25℃):
33.3
- Pd(W)(75℃):
16.7
- Rds (on) mΩ max(10V):
18
- Rds (on) mΩ max(4.5V):
25
- Rds (on) mΩ max(2.5V):
75
- Qg (nC):
7.2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ALPHA |
24+ |
TO252 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
AOS |
09+ |
TO-252 |
4900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
AOS/万代 |
25+ |
TO-252 |
20000 |
原装 |
|||
AOS/万代 |
13+ |
TO252 |
644 |
||||
AOS |
24+ |
TO252 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
AO |
25+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
AOS/万代 |
23+ |
TO-252 |
12579 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
AOS/万代 |
21+ |
TO-252 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
AOS/万代 |
25+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
AO |
新年份 |
TO-252 |
33288 |
原装正品现货,实单带TP来谈! |
AOD4120规格书下载地址
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2020-10-13
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