N-Channel MOSFET uses advanced SGT technology

Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=40A,RDS(ON)

100V N-Channel MOSFET

General Description The AOD4124 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpo

isc N-Channel MOSFET Transistor

• FEATURES • With TO-252(DPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Load switching • General purpose applications • Switching a

N-channel Enhancement Mode Power MOSFET

Features VDS= 100V, ID= 40 A RDS(ON)

MOSFET：N-Channel

High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS

Product Description The PE4124 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interface

HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS

DESCRIPTION UTC 4124 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed

POWER DIVIDERS

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POWER DIVIDERS

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POWER DIVIDERS FOUR-WAY, 1 TO 18 GHZ

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