100V N-Channel MOSFET

General Description The AOD4124 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpo

丝印代码：DPAK；isc N-Channel MOSFET Transistor

• FEATURES • With TO-252(DPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Load switching • General purpose applications • Switching a

N-Channel MOSFET uses advanced SGT technology

Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=40A,RDS(ON)

N-channel Enhancement Mode Power MOSFET

Features VDS= 100V, ID= 40 A RDS(ON)

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features ● Epitaxial Planar Die Construction ● Complementary PNP Type Available (MMBT4126) ● Ideal for Medium Power Amplification and Switching

NPN (GENERAL PURPOSE TRANSISTOR)

GENERAL PURPOSE TRANSISTOR

Amplifier Transistors

Amplifier Transistor NPN Silicon

24 mm Discrete HFET

24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5 at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

Amplifier Transistor(NPN Silicon)

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