N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. The device can also be used in PWM, load switching and general purpose ap

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 60A@ TC=25℃ • Drain Source Voltage- : VDSS=25V(Min) • Static Drain-Source On-Resistance : RDS(on) =4.0mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel Enhancement Mode Field Effect Transistor

文件：149.85 Kbytes Page：6 Pages

MOSFET：N-Channel

N-Channel Enhancement Mode Field Effect Transistor

文件：149.85 Kbytes Page：6 Pages

HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS

DESCRIPTION UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed

MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4128D is suitable for commonly power amplifier circuit, electronic ballasts and energy-saving light etc. FEAT

12-Bit, 200-MSPS, Ultralow-Power ADC

文件：1.47464 Mbytes Page：61 Pages

12-Bit, 200-MSPS, Ultralow-Power ADC

文件：1.41667 Mbytes Page：62 Pages

12-Bit, 200-MSPS, Ultralow-Power ADC

文件：1.47464 Mbytes Page：61 Pages