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AO34价格
参考价格:¥0.4550
型号:AO3400 品牌:AOS 备注:这里有AO34多少钱,2025年最近7天走势,今日出价,今日竞价,AO34批发/采购报价,AO34行情走势销售排行榜,AO34报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 spec | AOSMD 万国半导体 | |||
30V N-Channel Enhancement Mode MOSFET 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A | HTSEMI 金誉半导体 | |||
N-Channel enhancement mode field effect transistor ■ Features ● VDS (V) = 30V ● ID = 5.8 A (VGS = 10V) ● RDS(ON) 28m (VGS = 10V) ● RDS(ON) 33m (VGS = 4.5V) ● RDS(ON) 52m (VGS = 2.5V) | KEXIN 科信电子 | |||
N- CHANNEL MOSFET in a SOT-23 Plastic Package Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) | FOSHAN 蓝箭电子 | |||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | |||
N-Channel Enhancement MOSFET Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) m (VGS = 10V) RDS(ON) 3 m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) | YFWDIODE 佑风微电子 | |||
N-Channel Enhancement MOSFET Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) | EVVOSEMI 翊欧 | |||
30V N-Channel MOSFET General Description The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications. Product summary VDS 30V ID (at VGS=10V) 5.7A RDS(ON | KERSEMI | |||
N-Channel enhancement mode field effect transistor ■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | |||
N-Channel Enhancement Mode Power MOSFET Description The AO3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON) | LEIDITECH 雷卯电子 | |||
N-Channel Enhancement Mode Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 27m (VGS = 10V) RDS(ON) 31m (VGS = 4.5V) RDS(ON) 48m (VGS = 2.5V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | |||
N-Channel Enhancement Mode Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications). Features • VDS (V) = 30V • | ALPHA Alpha Industries | |||
N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 spec | AOSMD 万国半导体 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe | AOSMD 万国半导体 | |||
30V P-Channel Enhancement Mode MOSFET 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A | HTSEMI 金誉半导体 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product KSM3401 is Pb-free (meets ROHS & Sony 259 sp | KERSEMI | |||
P-Channel Enhancement Mode Field Effect Transistor AO3401(4.2A) P-Channel MOSFET P-Channel Enhancement Mode Field Effect Transistor | YIXIN 壹芯微 | |||
P-Channel Enhancement Mode MOSFET Feature ● -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applicati | ZPSEMIZP Semiconductor 至尚臻品 | |||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) | KEXIN 科信电子 | |||
Plastic-Encapsulate Mosfets P-Channel MOSFET FEATURES • The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. • This device is suitable for use as a load switch or in PWM applications. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | |||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | |||
P-Channel Enhancement MOSFET Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) | YFWDIODE 佑风微电子 | |||
P-Channel Enhancement Mode Power MOSFET General Features VDs = -30V.ID = -4.2A RDS(ON) | TECHPUBLIC 台舟电子 | |||
P-Enhancement Field Effect Transistor Features High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation Applications Power switching application Hard switched and high frequency circuits Uninterruptible power supply | EVVOSEMI 翊欧 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Comp | AOSMD 万国半导体 | |||
30V P-Channel MOSFET General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 2.5V. This device is suitab le for use as a load switch or other general applications. Product Summary VDS -3 | KERSEMI | |||
P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON) | KEXIN 科信电子 | |||
P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter | VBSEMI 微碧半导体 | |||
P-Channel Enhancement MOSFET Features ● VDS(V)=-30V ● ID=-4.2A(VGS=-10V) ● RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | |||
P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON) | KEXIN 科信电子 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe | AOSMD 万国半导体 | |||
P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) | YFWDIODE 佑风微电子 | |||
Plastic-Encapsulate Mosfets FEATURES ● The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | |||
N-Channel enhancement mode field effect transistor Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) | KEXIN 科信电子 | |||
N- CHANNEL MOSFET in a SOT-23 Plastic Package Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 30V ID = 4 A (VGS = 10V) RDS(ON) | FOSHAN 蓝箭电子 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu | KERSEMI | |||
30V N-Channel MOSFET General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu | AOSMD 万国半导体 | |||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | |||
N-Channel Enhancement Mode Power MOSFET Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON) | LEIDITECH 雷卯电子 | |||
N-Channel Enhancement Mode MOSFET Features Vbs = 30V,Ip = 3A Rosion) | TECHPUBLIC 台舟电子 | |||
N-Channel Enhancement MOSFET Features VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V) | EVVOSEMI 翊欧 | |||
N-Channel Enhancement Mode MOSFET Features Vbs = 30V,Ip = 3A Rosion) | TECHPUBLIC 台舟电子 | |||
N-Channel MOSFET FEATURES Lead free product is acquired Surface mount package | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | |||
N-Channel MOSFET Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) 55m (VGS = 10V) ● RDS(ON) 70m (VGS = 4.5V) ● RDS(ON) 110m (VGS = 2.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish | KEXIN 科信电子 | |||
N-Channel Enhancement MOSFET Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) 55m (VGS = 10V) ● RDS(ON) 70m (VGS = 4.5V) ● RDS(ON) 110m (VGS = 2.5V) | YFWDIODE 佑风微电子 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product order | AOSMD 万国半导体 | |||
P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-2.6 A (VGS =-10V) ● RDS(ON) | KEXIN 科信电子 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product order | KERSEMI | |||
Plastic-Encapsulate Mosfets P-Channel MOSFET FEATURES • The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | |||
30V P-Channel MOSFET Features VDS (V) = -30V ID = -2.6A (at VGS=-10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | |||
30V P-Channel MOSFET Features VDS (V) = -30V ID = -2.6A (at VGS=-10V) RDS(ON) | EVVOSEMI 翊欧 | |||
P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-2.6 A (VGS =-10V) ● RDS(ON) | KEXIN 科信电子 | |||
P-Channel Enhancement Mode Field Effect Transistor General Description The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product order | AOSMD 万国半导体 | |||
N-Channel Enhancement Mode Field Effect Transistor General Description The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Standard Product AO3404 is Pb-free (meets ROHS & Sony 259 specifications). AO3404L is a Green Product ordering opti | AOSMD 万国半导体 | |||
N-Channel Enhancement MOSFET Features ● VDS (V) = 30V ● ID =5.8 A (VGS=10V) ● RDS(ON) 28 mΩ (VGS = 10V) ● RDS(ON) 43 mΩ (VGS = 4.5V) | KEXIN 科信电子 | |||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter | VBSEMI 微碧半导体 | |||
N-Channel Enhancement Mode MOSFET Features Vos = 30V.lp = 5.8A Rosion) | TECHPUBLIC 台舟电子 | |||
N-Channel Enhancement MOSFET Features VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) | EVVOSEMI 翊欧 |
AO34产品属性
- 类型
描述
- 型号
AO34
- 制造商
AOS
- 功能描述
MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AOS/万代 |
24+ |
SOT-23 |
30000 |
房间原装现货特价热卖,有单详谈 |
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AOS/万代 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
AO |
25+ |
SOT23 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
AOS |
25+ |
DIP |
18000 |
原厂直接发货进口原装 |
|||
ALPHA |
24+ |
SOT-23 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
ALPHA |
1926+ |
Sot-23 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
TECH PUBLIC(台舟) |
2024+ |
SOT-23-3L |
500000 |
诚信服务,绝对原装原盘 |
|||
AOS |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
VBsemi(微碧) |
20+ |
SOT-23 |
3000 |
||||
AOS/万代 |
25+ |
SOT23 |
880000 |
明嘉莱只做原装正品现货 |
AO34芯片相关品牌
AO34规格书下载地址
AO34参数引脚图相关
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- AO3407A
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- AO3406L
- AO3406
- AO3405L
- AO3405
- AO3404L
- AO3404A
- AO3404
- AO3403L
- AO3403
- AO3402L
- AO3402
- AO3401L
- AO3401A
- AO3401
- AO3400L
- AO3400A
- AO3400
- AO331
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- AO3162
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- AO311
- AO30F48
- AO2634
- AO241R
- AO241
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- AO20A48
- AO1-X0-05-257-X63-I
- AO10B48
- ANXYY
- AN-X-TI
- ANX-SR
- ANX-91322
- ANX-91321
- ANX-91316
- ANX-91313
- ANX-91312
- ANX-91310
- ANX-91309
- ANX-91307
- ANX-91305
- ANX-91301
- ANX7816
- ANX7805
- ANX7747
- ANX7738
- ANX7688
- ANX-6L
- ANX-6F
- ANX-3L
- ANX-3F
- ANX-1L
- ANX-1F
AO34数据表相关新闻
AO3400A AOS/万代
https://hfx03.114ic.com/
2022-2-24AO3400A
AO3400A
2021-10-8ANX7805
ANX7805,全新755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-4-8ANX7812
ANX7812,全新755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-4-8ANX7814
ANX7814,全新755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-4-8AO3400
AO3400
2019-11-14
DdatasheetPDF页码索引
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