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AO34价格

参考价格：￥0.4550

型号：AO3400 品牌：AOS 备注：这里有AO34多少钱，2025年最近7天走势，今日出价，今日竞价，AO34批发/采购报价，AO34行情走势销售排行榜，AO34报价。

型号	功能描述	生产厂家企业	LOGO
AO3400	N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 spec	AOSMD 万国半导体	AOSMD
AO3400	30V N-Channel Enhancement Mode MOSFET 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A	HTSEMI 金誉半导体	HTSEMI
AO3400	N-Channel enhancement mode field effect transistor ■ Features ● VDS (V) = 30V ● ID = 5.8 A (VGS = 10V) ● RDS(ON) 28m (VGS = 10V) ● RDS(ON) 33m (VGS = 4.5V) ● RDS(ON) 52m (VGS = 2.5V)	KEXIN 科信电子	KEXIN
AO3400	N- CHANNEL MOSFET in a SOT-23 Plastic Package Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)	FOSHAN 蓝箭电子	FOSHAN
AO3400	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
AO3400	N-Channel Enhancement MOSFET Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) m (VGS = 10V) RDS(ON) 3 m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V)	YFWDIODE 佑风微	YFWDIODE
AO3400	N-Channel Enhancement MOSFET Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)	EVVOSEMI 翊欧	EVVOSEMI
AO3400A	30V N-Channel MOSFET General Description The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications. Product summary VDS 30V ID (at VGS=10V) 5.7A RDS(ON	KERSEMI	KERSEMI
AO3400A	N-Channel enhancement mode field effect transistor ■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON)	KEXIN 科信电子	KEXIN
AO3400A	N-Channel Enhancement Mode Power MOSFET Description The AO3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)	LEIDITECH 雷卯电子	LEIDITECH
AO3400A	N-Channel Enhancement Mode Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 27m (VGS = 10V) RDS(ON) 31m (VGS = 4.5V) RDS(ON) 48m (VGS = 2.5V)	UMW 友台半导体	UMW
AO3400A	N-Channel Enhancement Mode Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)	UMW 友台半导体	UMW
AO3400A	N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications). Features • VDS (V) = 30V •	ALPHA	ALPHA
AO3400A-HF	N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON)	KEXIN 科信电子	KEXIN
AO3400L	N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 spec	AOSMD 万国半导体	AOSMD
AO3401	P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe	AOSMD 万国半导体	AOSMD
AO3401	30V P-Channel Enhancement Mode MOSFET 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A	HTSEMI 金誉半导体	HTSEMI
AO3401	P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product KSM3401 is Pb-free (meets ROHS & Sony 259 sp	KERSEMI	KERSEMI
AO3401	P-Channel Enhancement Mode Field Effect Transistor AO3401(4.2A) P-Channel MOSFET P-Channel Enhancement Mode Field Effect Transistor	YIXIN 壹芯微	YIXIN
AO3401	P-Channel Enhancement Mode MOSFET Feature ● -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applicati	ZPSEMIZP Semiconductor 至尚臻品	ZPSEMI
AO3401	P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)	KEXIN 科信电子	KEXIN
AO3401	Plastic-Encapsulate Mosfets P-Channel MOSFET FEATURES • The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. • This device is suitable for use as a load switch or in PWM applications.	HOTTECH 合科泰	HOTTECH
AO3401	P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
AO3401	P-Channel Enhancement MOSFET Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON)	YFWDIODE 佑风微	YFWDIODE
AO3401	P-Channel Enhancement Mode Power MOSFET General Features VDs = -30V.ID = -4.2A RDS(ON)	TECHPUBLIC 台舟电子	TECHPUBLIC
AO3401	P-Enhancement Field Effect Transistor Features High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation Applications Power switching application Hard switched and high frequency circuits Uninterruptible power supply	EVVOSEMI 翊欧	EVVOSEMI
AO3401A	P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Comp	AOSMD 万国半导体	AOSMD
AO3401A	30V P-Channel MOSFET General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 2.5V. This device is suitab le for use as a load switch or other general applications. Product Summary VDS -3	KERSEMI	KERSEMI
AO3401A	P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)	KEXIN 科信电子	KEXIN
AO3401A	P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
AO3401A	P-Channel Enhancement MOSFET Features ● VDS(V)=-30V ● ID=-4.2A(VGS=-10V) ● RDS(ON)	UMW 友台半导体	UMW
AO3401A-HF	P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)	KEXIN 科信电子	KEXIN
AO3401L	P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe	AOSMD 万国半导体	AOSMD
AO3401-SOT23-3L	P-Channel Enhancement MOSFET ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)	YFWDIODE 佑风微	YFWDIODE
AO3402	Plastic-Encapsulate Mosfets FEATURES ● The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.	HOTTECH 合科泰	HOTTECH
AO3402	N-Channel enhancement mode field effect transistor Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON)	KEXIN 科信电子	KEXIN
AO3402	N- CHANNEL MOSFET in a SOT-23 Plastic Package Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 30V ID = 4 A (VGS = 10V) RDS(ON)	FOSHAN 蓝箭电子	FOSHAN
AO3402	N-Channel Enhancement Mode Field Effect Transistor General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu	KERSEMI	KERSEMI
AO3402	30V N-Channel MOSFET General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu	AOSMD 万国半导体	AOSMD
AO3402	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
AO3402	N-Channel Enhancement Mode Power MOSFET Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)	LEIDITECH 雷卯电子	LEIDITECH
AO3402	N-Channel Enhancement Mode MOSFET Features Vbs = 30V,Ip = 3A Rosion)	TECHPUBLIC 台舟电子	TECHPUBLIC
AO3402	N-Channel Enhancement MOSFET Features VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V)	EVVOSEMI 翊欧	EVVOSEMI
AO3402A	N-Channel Enhancement Mode MOSFET Features Vbs = 30V,Ip = 3A Rosion)	TECHPUBLIC 台舟电子	TECHPUBLIC
AO3402A	N-Channel MOSFET FEATURES Lead free product is acquired Surface mount package	UMW 友台半导体	UMW
AO3402-HF	N-Channel MOSFET Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) 55m (VGS = 10V) ● RDS(ON) 70m (VGS = 4.5V) ● RDS(ON) 110m (VGS = 2.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish	KEXIN 科信电子	KEXIN
AO3402-SOT23-3L	N-Channel Enhancement MOSFET Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) 55m (VGS = 10V) ● RDS(ON) 70m (VGS = 4.5V) ● RDS(ON) 110m (VGS = 2.5V)	YFWDIODE 佑风微	YFWDIODE
AO3403	P-Channel Enhancement Mode Field Effect Transistor General Description The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product order	AOSMD 万国半导体	AOSMD
AO3403	P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-2.6 A (VGS =-10V) ● RDS(ON)	KEXIN 科信电子	KEXIN
AO3403	P-Channel Enhancement Mode Field Effect Transistor General Description The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product order	KERSEMI	KERSEMI
AO3403	Plastic-Encapsulate Mosfets P-Channel MOSFET FEATURES • The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.	HOTTECH 合科泰	HOTTECH
AO3403A	30V P-Channel MOSFET Features VDS (V) = -30V ID = -2.6A (at VGS=-10V) RDS(ON)	UMW 友台半导体	UMW
AO3403A	30V P-Channel MOSFET Features VDS (V) = -30V ID = -2.6A (at VGS=-10V) RDS(ON)	EVVOSEMI 翊欧	EVVOSEMI
AO3403-HF	P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-2.6 A (VGS =-10V) ● RDS(ON)	KEXIN 科信电子	KEXIN
AO3403L	P-Channel Enhancement Mode Field Effect Transistor General Description The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product order	AOSMD 万国半导体	AOSMD
AO3404	N-Channel Enhancement Mode Field Effect Transistor General Description The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Standard Product AO3404 is Pb-free (meets ROHS & Sony 259 specifications). AO3404L is a Green Product ordering opti	AOSMD 万国半导体	AOSMD
AO3404	N-Channel Enhancement MOSFET Features ● VDS (V) = 30V ● ID =5.8 A (VGS=10V) ● RDS(ON) 28 mΩ (VGS = 10V) ● RDS(ON) 43 mΩ (VGS = 4.5V)	KEXIN 科信电子	KEXIN
AO3404	N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter	VBSEMI 微碧半导体	VBSEMI
AO3404	N-Channel Enhancement Mode MOSFET Features Vos = 30V.lp = 5.8A Rosion)	TECHPUBLIC 台舟电子	TECHPUBLIC
AO3404	N-Channel Enhancement MOSFET Features VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON)	EVVOSEMI 翊欧	EVVOSEMI

AO34产品属性

类型
描述
型号
AO34
制造商
AOS
功能描述
MOSFET

AO34供应商更多...

更新时间：2025-12-25 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	AO3400A/AO3400	AOS	24+	SOT23-3	3524	原厂直供,支持账期,免费供样,技术支持	询价
深圳市凌旭科技有限公司	AO3400	ALPHA	2016+	SOT-23	5500	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海意淼电子科技有限公司	AO3400	TRAN	23+	SOT23	3000	全新原装假一赔十	询价
深圳市华睿芯科技有限公司	AO3400	ALPHA	24+	SOT-23	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市粤骏腾电子科技有限公司	AO3400	AOS/万代	24+	SOT-23	593428	MOS管优势产品热卖中	询价
千层芯半导体(深圳)有限公司	AO3400	AOS	24+	17+	4	SOT23	询价
深圳市毅创腾电子科技有限公司	AO3400	ALPHA	23+	SOT23/3	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市赛特兴科技有限公司	AO3400	AOS万代	23+	SOT23	12560	正规渠道,只有原装!	询价
深圳市卓越微芯电子有限公司	AO3400	AOS	25+	SOT23-3	999999	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市益百分电子有限公司	AO3400	AO	15+	SOT23	3050	原装现货价格有优势量大可以发货	询价

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AO34价格

AO34产品属性

AO34供应商更多...

AO34芯片相关品牌

AO34规格书下载地址

AO34参数引脚图相关

AO34数据表相关新闻

AO3400A AOS/万代

AO3400A

ANX7805

ANX7812

ANX7814

AO3400

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