AO34价格

参考价格:¥0.4550

型号:AO3400 品牌:AOS 备注:这里有AO34多少钱,2025年最近7天走势,今日出价,今日竞价,AO34批发/采购报价,AO34行情走势销售排行榜,AO34报价。
型号 功能描述 生产厂家&企业 LOGO 操作

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 spec

AOSMD

万国半导体

30V N-Channel Enhancement Mode MOSFET

30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

HTSEMI

金誉半导体

N-Channel enhancement mode field effect transistor

■ Features ● VDS (V) = 30V ● ID = 5.8 A (VGS = 10V) ● RDS(ON) 28m (VGS = 10V) ● RDS(ON) 33m (VGS = 4.5V) ● RDS(ON) 52m (VGS = 2.5V)

KEXIN

科信电子

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

FOSHAN

蓝箭电子

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

N-Channel Enhancement MOSFET

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) m (VGS = 10V) RDS(ON) 3 m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V)

YFWDIODE

佑风微电子

N-Channel Enhancement MOSFET

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

EVVOSEMI

翊欧

30V N-Channel MOSFET

General Description The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications. Product summary VDS 30V ID (at VGS=10V) 5.7A RDS(ON

KERSEMI

N-Channel enhancement mode field effect transistor

■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

N-Channel Enhancement Mode Power MOSFET

Description The AO3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

LEIDITECH

雷卯电子

N-Channel Enhancement Mode

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 27m (VGS = 10V) RDS(ON) 31m (VGS = 4.5V) RDS(ON) 48m (VGS = 2.5V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

N-Channel Enhancement Mode

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications). Features • VDS (V) = 30V •

ALPHA

Alpha Industries

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 spec

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe

AOSMD

万国半导体

30V P-Channel Enhancement Mode MOSFET

30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A

HTSEMI

金誉半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product KSM3401 is Pb-free (meets ROHS & Sony 259 sp

KERSEMI

P-Channel Enhancement Mode Field Effect Transistor

AO3401(4.2A) P-Channel MOSFET P-Channel Enhancement Mode Field Effect Transistor

YIXIN

壹芯微

P-Channel Enhancement Mode MOSFET

Feature ● -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applicati

ZPSEMIZP Semiconductor

至尚臻品

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

KEXIN

科信电子

Plastic-Encapsulate Mosfets

P-Channel MOSFET FEATURES • The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. • This device is suitable for use as a load switch or in PWM applications.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel Enhancement MOSFET

Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON)

YFWDIODE

佑风微电子

P-Channel Enhancement Mode Power MOSFET

General Features VDs = -30V.ID = -4.2A RDS(ON)

TECHPUBLIC

台舟电子

P-Enhancement Field Effect Transistor

Features High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation Applications Power switching application Hard switched and high frequency circuits Uninterruptible power supply

EVVOSEMI

翊欧

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Comp

AOSMD

万国半导体

30V P-Channel MOSFET

General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 2.5V. This device is suitab le for use as a load switch or other general applications. Product Summary VDS -3

KERSEMI

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

KEXIN

科信电子

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

P-Channel Enhancement MOSFET

Features ● VDS(V)=-30V ● ID=-4.2A(VGS=-10V) ● RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe

AOSMD

万国半导体

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

YFWDIODE

佑风微电子

Plastic-Encapsulate Mosfets

FEATURES ● The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

N-Channel enhancement mode field effect transistor

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON)

KEXIN

科信电子

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 30V ID = 4 A (VGS = 10V) RDS(ON)

FOSHAN

蓝箭电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu

KERSEMI

30V N-Channel MOSFET

General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu

AOSMD

万国半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

N-Channel Enhancement Mode Power MOSFET

Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

LEIDITECH

雷卯电子

N-Channel Enhancement Mode MOSFET

Features Vbs = 30V,Ip = 3A Rosion)

TECHPUBLIC

台舟电子

N-Channel Enhancement MOSFET

Features VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V)

EVVOSEMI

翊欧

N-Channel Enhancement Mode MOSFET

Features Vbs = 30V,Ip = 3A Rosion)

TECHPUBLIC

台舟电子

N-Channel MOSFET

FEATURES Lead free product is acquired Surface mount package

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

N-Channel MOSFET

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) 55m (VGS = 10V) ● RDS(ON) 70m (VGS = 4.5V) ● RDS(ON) 110m (VGS = 2.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

KEXIN

科信电子

N-Channel Enhancement MOSFET

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) 55m (VGS = 10V) ● RDS(ON) 70m (VGS = 4.5V) ● RDS(ON) 110m (VGS = 2.5V)

YFWDIODE

佑风微电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product order

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-2.6 A (VGS =-10V) ● RDS(ON)

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product order

KERSEMI

Plastic-Encapsulate Mosfets

P-Channel MOSFET FEATURES • The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

30V P-Channel MOSFET

Features VDS (V) = -30V ID = -2.6A (at VGS=-10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

30V P-Channel MOSFET

Features VDS (V) = -30V ID = -2.6A (at VGS=-10V) RDS(ON)

EVVOSEMI

翊欧

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-2.6 A (VGS =-10V) ● RDS(ON)

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product order

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Standard Product AO3404 is Pb-free (meets ROHS & Sony 259 specifications). AO3404L is a Green Product ordering opti

AOSMD

万国半导体

N-Channel Enhancement MOSFET

Features ● VDS (V) = 30V ● ID =5.8 A (VGS=10V) ● RDS(ON) 28 mΩ (VGS = 10V) ● RDS(ON) 43 mΩ (VGS = 4.5V)

KEXIN

科信电子

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

N-Channel Enhancement Mode MOSFET

Features Vos = 30V.lp = 5.8A Rosion)

TECHPUBLIC

台舟电子

N-Channel Enhancement MOSFET

Features VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON)

EVVOSEMI

翊欧

AO34产品属性

  • 类型

    描述

  • 型号

    AO34

  • 制造商

    AOS

  • 功能描述

    MOSFET

更新时间:2025-8-31 20:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS/万代
24+
SOT-23
30000
房间原装现货特价热卖,有单详谈
AOS/万代
22+
SOT-23
100000
代理渠道/只做原装/可含税
AO
25+
SOT23
54648
百分百原装现货 实单必成 欢迎询价
AOS
25+
DIP
18000
原厂直接发货进口原装
ALPHA
24+
SOT-23
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ALPHA
1926+
Sot-23
6852
只做原装正品现货!或订货假一赔十!
TECH PUBLIC(台舟)
2024+
SOT-23-3L
500000
诚信服务,绝对原装原盘
AOS
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
VBsemi(微碧)
20+
SOT-23
3000
AOS/万代
25+
SOT23
880000
明嘉莱只做原装正品现货

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