P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Comp

30V P-Channel MOSFET

General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 2.5V. This device is suitab le for use as a load switch or other general applications. Product Summary VDS -3

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel Enhancement MOSFET

Features ● VDS(V)=-30V ● ID=-4.2A(VGS=-10V) ● RDS(ON)

P沟道MOSFET (8V - 60V)

30V P-Channel MOSFET

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30V P-Channel MOSFET

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P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

30V P-Channel MOSFET

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P-Channel MOSFET

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P-Channel MOSFET

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包装：卷带（TR） 描述：MOSFET P-CH 30V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

Heyco® Nylon Liquid Tight Threaded Plugs

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Nylon Liquid Tight Threaded Plugs

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P-channel enhancement MOS FET

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-4.0A竊?30V P-CHANNEL MOSFET

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