P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Comp

30V P-Channel MOSFET

General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 2.5V. This device is suitab le for use as a load switch or other general applications. Product Summary VDS -3

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel Enhancement MOSFET

Features ● VDS(V)=-30V ● ID=-4.2A(VGS=-10V) ● RDS(ON)

30V P-Channel MOSFET

文件：242.15 Kbytes Page：5 Pages

30V P-Channel MOSFET

文件：496.27 Kbytes Page：5 Pages

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

30V P-Channel MOSFET

文件：242.15 Kbytes Page：5 Pages

P-Channel MOSFET

文件：1.34726 Mbytes Page：4 Pages

P-Channel MOSFET

文件：1.84233 Mbytes Page：4 Pages

包装：卷带（TR） 描述：MOSFET P-CH 30V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

Heyco® Nylon Liquid Tight Threaded Plugs

文件：134.37 Kbytes Page：1 Pages

Nylon Liquid Tight Threaded Plugs

文件：134.4 Kbytes Page：1 Pages

4700

文件：48.7 Kbytes Page：1 Pages

P-channel enhancement MOS FET

文件：319.59 Kbytes Page：2 Pages

-4.0A竊?30V P-CHANNEL MOSFET

文件：118.9 Kbytes Page：5 Pages