丝印代码：X1**；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Comp

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

30V P-Channel MOSFET

General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 2.5V. This device is suitab le for use as a load switch or other general applications. Product Summary VDS -3

丝印代码：X1PV；P-Channel Enhancement MOSFET

Features ● VDS(V)=-30V ● ID=-4.2A(VGS=-10V) ● RDS(ON)

P沟道MOSFET (8V - 60V)

30V P-Channel MOSFET

丝印代码：X1**；30V P-Channel MOSFET

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丝印代码：X1**；30V P-Channel MOSFET

文件：242.15 Kbytes Page：5 Pages

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

30V P-Channel MOSFET

文件：242.15 Kbytes Page：5 Pages

P-Channel MOSFET

文件：1.34726 Mbytes Page：4 Pages

P-Channel MOSFET

文件：1.84233 Mbytes Page：4 Pages

包装：卷带（TR） 描述：MOSFET P-CH 30V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

GSM Power Management System

GENERAL DESCRIPTION The ADP3401 is a multifunction power management system IC optimized for GSM cell phones. The wide input voltage range of 3.0 V to 7.0 V makes the ADP3401 ideal for both single cell Li-Ion and three cell NiMH designs. The current consumption of the ADP3401 has been optimized fo

VCO Non-Adjusting PLL FM MPX Stereo Demodulator with FM Accessories

Overview The LA3401 is a multifunctional MPX demodulator IC designed for FM stereo electronic tuning. It features the VCO non-adjusting function that eliminates the need to adjust free-running frequency of VCO and the accessory functions such as FM/AM input, FM/AM input changeover, muting.

Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET Features • Low ON resistance. • Ultrahigh-speed swithcing. • 2.5V drive.

NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Features ● Especially suitable for applications from 460 nm to 1080 nm ● High linearity ● SMT package with base connection, suitable for vapor phase and IR reflow soldering (JEDEC level 4) ● Available only on tape and reel Applications ● Ambient light detector ● Photointerrupters ● Industr

0.8 inch ( 20.32 mm ) SINGLE DIGIT NUMERIC LED DISPLAYS

DESCRIPTION The UVS-3401L/3403L is 0.8 inch (20.32mm) height single digit display. Choices of five colors-high efficiency red/bright red/green/yellow/red orange. All devices displays have gray face and white segments. The bright red and green LED chip are made from GaP on a transparent GaP subst