Plastic-Encapsulate Mosfets

FEATURES ● The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.

N-Channel enhancement mode field effect transistor

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON)

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 30V ID = 4 A (VGS = 10V) RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu

30V N-Channel MOSFET

General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

N-Channel Enhancement Mode Power MOSFET

Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

N-Channel Enhancement Mode MOSFET

Features Vbs = 30V,Ip = 3A Rosion)

N-Channel Enhancement MOSFET

Features VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V)

N-Channel Enhancement Mode MOSFET

低压MOSFET (12V - 30V)

N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode MOSFET

Features Vbs = 30V,Ip = 3A Rosion)

N-Channel MOSFET

FEATURES Lead free product is acquired Surface mount package

N-Channel MOSFET

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) 55m (VGS = 10V) ● RDS(ON) 70m (VGS = 4.5V) ● RDS(ON) 110m (VGS = 2.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

N-Channel Enhancement MOSFET

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) 55m (VGS = 10V) ● RDS(ON) 70m (VGS = 4.5V) ● RDS(ON) 110m (VGS = 2.5V)

包装：卷带（TR） 描述：MOSFET N-CH 30V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel Enhancement MOSFET

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N-Channel Enhancement Mode MOSFET

N-Channel MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

文件：111.94 Kbytes Page：4 Pages

200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

Heyco® PG and Metric Threaded Plugs

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4.0A竊?0V N-CHANNEL MOSFET

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SPACERS & STANDOFFS

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