Plastic-Encapsulate Mosfets

FEATURES ● The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.

N-Channel enhancement mode field effect transistor

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON)

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 30V ID = 4 A (VGS = 10V) RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu

30V N-Channel MOSFET

General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package. Featu

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

丝印代码：3400；N-Channel Enhancement Mode Power MOSFET

Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

丝印代码：A29T；N-Channel Enhancement Mode MOSFET

Features Vbs = 30V,Ip = 3A Rosion)

N-Channel Enhancement MOSFET

Features VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V)

低压MOSFET (12V - 30V)

30V N-Channel MOSFET

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode Field Effect Transistor

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丝印代码：A29T；N-Channel Enhancement Mode MOSFET

Features Vbs = 30V,Ip = 3A Rosion)

丝印代码：A2CV；N-Channel MOSFET

FEATURES Lead free product is acquired Surface mount package

N-Channel MOSFET

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) 55m (VGS = 10V) ● RDS(ON) 70m (VGS = 4.5V) ● RDS(ON) 110m (VGS = 2.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

N-Channel Enhancement MOSFET

Features ● VDS (V) = 30V ● ID = 4 A ● RDS(ON) 55m (VGS = 10V) ● RDS(ON) 70m (VGS = 4.5V) ● RDS(ON) 110m (VGS = 2.5V)

包装：卷带（TR） 描述：MOSFET N-CH 30V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel Enhancement MOSFET

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N-Channel Enhancement Mode MOSFET

N-Channel MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

文件：111.94 Kbytes Page：4 Pages

GSM Power Management System

GENERAL DESCRIPTION The ADP3402 is a multifunction power management system IC optimized for GSM cell phones. The wide input voltage range of 3.0 V to 7.0 V makes the ADP3402 ideal for both single cell Li-Ion and three cell NiMH designs. The current consumption of the ADP3402 has been optimized fo

GSM Power Management System

GENERAL DESCRIPTION The ADP3402 is a multifunction power management system IC optimized for GSM cell phones. The wide input voltage range of 3.0 V to 7.0 V makes the ADP3402 ideal for both single cell Li-Ion and three cell NiMH designs. The current consumption of the ADP3402 has been optimized fo

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed swithcing. • 4V drive.

Marktech Axial Leaded Lensed Version LEDs

FEATURES • All plastic mold type • Will fit in small space • Low current operation

1.8 Low Power, Quad Input, 16-Bit Sigma-Delta A/D Converter

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