丝印代码：A0**；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 spec

30V N-Channel Enhancement Mode MOSFET

30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

N-Channel enhancement mode field effect transistor

■ Features ● VDS (V) = 30V ● ID = 5.8 A (VGS = 10V) ● RDS(ON) 28m (VGS = 10V) ● RDS(ON) 33m (VGS = 4.5V) ● RDS(ON) 52m (VGS = 2.5V)

N- CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N- CHANNEL MOSFET in a SOT-23 Plastic Package. Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

丝印代码：A0H；N-Channel Enhancement MOSFET

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) m (VGS = 10V) RDS(ON) 3 m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V)

N-Channel Enhancement MOSFET

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

30V N-CHANNEL MOSFET

30V N-CHANNEL MOSFET

场效应管

30V N-Channel MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications). Features • VDS (V) = 30V •

30V N-Channel MOSFET

General Description The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications. Product summary VDS 30V ID (at VGS=10V) 5.7A RDS(ON

N-Channel enhancement mode field effect transistor

■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON)

丝印代码：3400；N-Channel Enhancement Mode Power MOSFET

Description The AO3400A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.8A RDS(ON)

丝印代码：X0DV22；N-Channel Enhancement Mode

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 27m (VGS = 10V) RDS(ON) 31m (VGS = 4.5V) RDS(ON) 48m (VGS = 2.5V)

丝印代码：X0DV；N-Channel Enhancement Mode

Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 5.7 A (VGS = 10V) ● RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 spec

包装：卷带（TR） 描述：MOSFET N-CH 30V 5.8A SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

30V N-Channel MOSFET

文件：477.74 Kbytes Page：5 Pages

N-Channel Enhancement MOSFET

文件：1.21739 Mbytes Page：4 Pages

丝印代码：X0**；30V N-Channel MOSFET

文件：476.66 Kbytes Page：5 Pages

30V N-Channel MOSFET

文件：477.74 Kbytes Page：5 Pages

包装：卷带（TR） 描述：MOSFET N-CH 30V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

30V N-Channel MOSFET

文件：476.66 Kbytes Page：5 Pages

N-Channel MOSFET

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N-Channel MOSFET

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N-Channel MOSFET

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N-Channel MOSFET

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N-Channel Enhancement MOSFET

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FAST RECOVERY RECTIFIER DIODE

DESCRIPTION Single high voltage rectifier suited to Switch Mode Power Supplies and other power converters. FEATURES AND BENEFITS ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING ■ SURFACE MOUNT PACKAGE ■ TAPE AND REEL OPTION : -TR

6-channel CCD Vertical Clock Driver

Description The CXD3400N is a vertical clock driver for CCD image sensor. This IC is composed of 6 channels which supports high frame rate readout mode. Features • Composition Vertical transfer output 3 levels driver × 4 2 levels driver × 2 Elect

FM Multiplex Filter

Overview The LV3400M is a filter IC designed for FM multiplex broadcast reception and is used in combination with the Sanyo LC72700 demodulation/error correction IC. The adoption of switched capacitor (SCF) technology means that frequency adjustment is not required and that the LV3400M provides s

FM Multiplex Filter

Overview The LV3400M is a filter IC designed for FM multiplex broadcast reception and is used in combination with the Sanyo LC72700 demodulation/error correction IC. The adoption of switched capacitor (SCF) technology means that frequency adjustment is not required and that the LV3400M provides s

NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Features ● Especially suitable for applications from 460 nm to 1080 nm ● High linearity ● SMT package without base connection, suitable for vapor phase and IR reflow soldering (JEDEC level 4) ● Available only on tape and reel Applications ● Ambient light detector