P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe

P-Channel Enhancement Mode Field Effect Transistor

AO3401(4.2A) P-Channel MOSFET P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode MOSFET

Feature ● -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applicati

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

Plastic-Encapsulate Mosfets

P-Channel MOSFET FEATURES • The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. • This device is suitable for use as a load switch or in PWM applications.

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

30V P-Channel Enhancement Mode MOSFET

30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product KSM3401 is Pb-free (meets ROHS & Sony 259 sp

丝印代码：B1H；P-Channel Enhancement MOSFET

Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON)

丝印代码：A19T；P-Channel Enhancement Mode Power MOSFET

General Features VDs = -30V.ID = -4.2A RDS(ON)

P-Enhancement Field Effect Transistor

Features High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation Applications Power switching application Hard switched and high frequency circuits Uninterruptible power supply

场效应管

中低压MOS

P-Channel Enhancement Mode Power MOSFET

30V P-Channel MOSFET

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30V P-Channel MOSFET

General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 2.5V. This device is suitab le for use as a load switch or other general applications. Product Summary VDS -3

丝印代码：X1**；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Comp

丝印代码：X1PV；P-Channel Enhancement MOSFET

Features ● VDS(V)=-30V ● ID=-4.2A(VGS=-10V) ● RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

丝印代码：A1**；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

30V P-Channel MOSFET

文件：503.25 Kbytes Page：5 Pages

丝印代码：A1*；P-Channel Enhancement MOSFET

文件：1.59184 Mbytes Page：4 Pages

丝印代码：X1**；30V P-Channel MOSFET

文件：242.15 Kbytes Page：5 Pages

丝印代码：X1**；30V P-Channel MOSFET

文件：496.27 Kbytes Page：5 Pages

30V P-Channel MOSFET

文件：242.15 Kbytes Page：5 Pages

P-Channel MOSFET

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P-Channel MOSFET

文件：1.84233 Mbytes Page：4 Pages

包装：卷带（TR） 描述：MOSFET P-CH 30V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

P-Channel Enhancement MOSFET

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P-Channel Enhancement MOSFET

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GSM Power Management System

GENERAL DESCRIPTION The ADP3401 is a multifunction power management system IC optimized for GSM cell phones. The wide input voltage range of 3.0 V to 7.0 V makes the ADP3401 ideal for both single cell Li-Ion and three cell NiMH designs. The current consumption of the ADP3401 has been optimized fo

VCO Non-Adjusting PLL FM MPX Stereo Demodulator with FM Accessories

Overview The LA3401 is a multifunctional MPX demodulator IC designed for FM stereo electronic tuning. It features the VCO non-adjusting function that eliminates the need to adjust free-running frequency of VCO and the accessory functions such as FM/AM input, FM/AM input changeover, muting.

Ultrahigh-Speed Switching Applications

N-Channel Silicon MOSFET Features • Low ON resistance. • Ultrahigh-speed swithcing. • 2.5V drive.

NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Features ● Especially suitable for applications from 460 nm to 1080 nm ● High linearity ● SMT package with base connection, suitable for vapor phase and IR reflow soldering (JEDEC level 4) ● Available only on tape and reel Applications ● Ambient light detector ● Photointerrupters ● Industr

0.8 inch ( 20.32 mm ) SINGLE DIGIT NUMERIC LED DISPLAYS

DESCRIPTION The UVS-3401L/3403L is 0.8 inch (20.32mm) height single digit display. Choices of five colors-high efficiency red/bright red/green/yellow/red orange. All devices displays have gray face and white segments. The bright red and green LED chip are made from GaP on a transparent GaP subst