P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe

P-Channel Enhancement Mode Field Effect Transistor

AO3401(4.2A) P-Channel MOSFET P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode MOSFET

Feature ● -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V. ● Super High dense cell design for extremely low RDS(ON) ● Reliable and Rugged ● SOT-23 for Surface Mount Package Applicati

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

30V P-Channel Enhancement Mode MOSFET

30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product KSM3401 is Pb-free (meets ROHS & Sony 259 sp

Plastic-Encapsulate Mosfets

P-Channel MOSFET FEATURES • The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. • This device is suitable for use as a load switch or in PWM applications.

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel Enhancement MOSFET

Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON)

P-Channel Enhancement Mode Power MOSFET

General Features VDs = -30V.ID = -4.2A RDS(ON)

P-Enhancement Field Effect Transistor

Features High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation Applications Power switching application Hard switched and high frequency circuits Uninterruptible power supply

场效应管

中低压MOS

P-Channel Enhancement Mode Power MOSFET

30V P-Channel MOSFET

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P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401A/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. AO3401A and AO3401AL are electrically identical. -RoHS Comp

P-Channel Enhancement MOSFET

Features ● VDS(V)=-30V ● ID=-4.2A(VGS=-10V) ● RDS(ON)

30V P-Channel MOSFET

General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation gate voltages as low as 2.5V. This device is suitab le for use as a load switch or other general applications. Product Summary VDS -3

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4 A (VGS =-10V) ● RDS(ON)

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 spe

P-Channel Enhancement MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON)

30V P-Channel MOSFET

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P-Channel Enhancement MOSFET

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包装：卷带（TR） 描述：MOSFET P-CH 30V SOT23 分立半导体产品 晶体管 - FET，MOSFET - 单个

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