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3SK3价格
参考价格：￥0.8450
型号：3SK301 品牌：Panasonic 备注：这里有3SK3多少钱，2024年最近7天走势，今日出价，今日竞价，3SK3批发/采购报价，3SK3行情走势销售排行榜，3SK3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SiliconNChannelDualGateMOSFETUHF/VHFRFAmplifier Features •LownoisefigureNF=1.0dBtyp.atf=200MHz •HighgainPG=27.6dBtyp.atf=200MHz | HitachiHitachi, Ltd. 日立公司 |  |   | |
SiliconNChannelDualGateMOSFETUHF/VHFRFAmplifier Features •Lownoisefigure. NF=1.0dBtyp.atf=200MHz •Highgain PG=27.6dBtyp.atf=200MHz | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SiliconNChannelDualGateMOSFETUHF/VHFRFAmplifier Features •Lownoisefigure. NF=1.0dBtyp.atf=200MHz •Highgain PG=27.6dBtyp.atf=200MHz | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
GaAsNChannelDualGateMESFETUHFRFAmplifier Features •Capableoflowvoltageoperation(VDS=1.5to3V) •Excellentlownoisecharacteristics(NF=1.25dBtyp.atf=900MHz) •Highpowergain(PG=21.0dBtyp.atf=900MHz) | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelDualGateMOSFETUHF/VHFRFAmplifier Features •Lownoisecharacteristics; (NF=1.0dBtyp.atf=200MHz) •Highpowergaincharacteristics; (PG=27.6dBtyp.atf=200MHz) | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelDualGateMOSFETUHFRFAmplifier Features •Lownoisecharacteristics; (NF=1.4dBtyp.atf=900MHz) •Excellentcrossmodulationcharacteristics •Capablelowvoltageoperation;+B=5V | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelDualGateMOSFETUHFRFAmplifier Features •Lownoisecharacteristics; (NF=1.4dBtyp.atf=900MHz) •Excellentcrossmodulationcharacteristics •Capablelowvoltageoperation;+B=5V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelDualGateMOSFETUHFRFAmplifier Features •Lownoisecharacteristics; (NF=1.4dBtyp.atf=900MHz) •Excellentcrossmodulationcharacteristics •Capablelowvoltageoperation;+B=5V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelDualGateMOSFETUHFRFAmplifier Features •Lownoisecharacteristics; (NF=1.4dBtyp.atf=900MHz) •Excellentcrossmodulationcharacteristics •Capablelowvoltageoperation;+B=5V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelDualGateMOSFETUHFRFAmplifier Features •Lownoisecharacteristics; (NF=1.4dBtyp.atf=900MHz) •Excellentcrossmodulationcharacteristics •Capablelowvoltageoperation;+B=5V | HitachiHitachi, Ltd. 日立公司 | | | |
SiliconN-ChannelDualGateMOSFETUHFRFAmplifier Features •Lownoisecharacteristics; (NF=1.4dBtyp.atf=900MHz) •Excellentcrossmodulationcharacteristics •Capablelowvoltageoperation;+B=5V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelDualGateMOSFET Features ·Lownoisefigure. NF=1.0dBtyp.atf=200MHz ·Capableoflowvoltageoperation ·Provideminimoldpackages;MPAK-4R(SOT-143var.) Application UHF/VHFRFamplifier | HitachiHitachi, Ltd. 日立公司 | | | |
SiNchDualGateMOSFETUHFRFLOWNOISEAmplifier Features •Lownoisecharacteristics;NF=1.0dBtyp.(atf=900MHz) •Highgaincharacteristics;PG=24dBtyp.(atf=900MHz) •Capablelowvoltageoperation;+B=3.5V •HighEnduranceVoltage;VDS=6V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiNchDualGateMOSFETUHFRFLOWNOISEAmplifier Features •Lownoisecharacteristics;NF=1.0dBtyp.(atf=900MHz) •Highgaincharacteristics;PG=24dBtyp.(atf=900MHz) •Capablelowvoltageoperation;+B=3.5V •HighEnduranceVoltage;VDS=6V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiNchDualGateMOSFETUHFRFLOWNOISEAmplifier Features •Lownoisecharacteristics;NF=1.0dBtyp.(atf=900MHz) •Highgaincharacteristics;PG=24dBtyp.(atf=900MHz) •Capablelowvoltageoperation;+B=3.5V •HighEnduranceVoltage;VDS=6V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiNchDualGateMOSFETUHFRFLOWNOISEAmplifier Features •Lownoisecharacteristics;NF=1.0dBtyp.(atf=900MHz) •Highgaincharacteristics;PG=24dBtyp.(atf=900MHz) •Capablelowvoltageoperation;+B=3.5V •HighEnduranceVoltage;VDS=6V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelDualGateMOSFETUHF/VHFRFAmplifier 文件：76.68 Kbytes Page：7 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconN-ChannelDualGateMOSFETUHF/VHFRFAmplifier 文件：76.68 Kbytes Page：7 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：SC-82A，SOT-343 包装：管件 描述：TRANS N-CH CMPAK-4 分立半导体产品 晶体管 - FET，MOSFET - 射频 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NCHANNELDUALGATEMESTYPE(UHFBANDLOWNOISEAMP,MIX) 文件：525.04 Kbytes Page：9 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | | |
SiliconN-ChannelDualGateMOSFET 文件：59.19 Kbytes Page：10 Pages | HitachiHitachi, Ltd. 日立公司 | | | |
TRANSISTOR 文件：192.33 Kbytes Page：3 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
TopMountRGBChipLED Features(產品特色) •Package:RGB3in1package/4pinPolarity (封裝方式：RGB三色封裝/4極性點) •Anti-Reflectionresin 啞光膠體 •Viewangle:>=120ﾟ(min50brightness) 發光角度：大於等於120度﹝50光強度﹞ •Componentsolderablesurfacefinishisgold 元件可銲接表面為鍍金板 •Highcontrast 高對比性 MainApplications(主要應用) •Indoordisplay | HarvatekHarvatek 宏齐科技股份有限公司宏齐 |  | |
3SK3产品属性
- 类型
描述
- 型号
3SK3
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N Channel Dual Gate MOS FET UHF/VHF RF Amplifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2020+ |
SOT-343 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
RENESAS |
20+ |
SOT343 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
HITACHI |
23+ |
SOT-143 |
7000 |
全新原装现货 |
|||
RENESAS/瑞萨 |
24+ |
SOT-343 |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
22+ |
SOT143 |
6521 |
只做原装正品现货!或订货假一赔十! |
|||
SOT-323 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS/瑞萨 |
22+ |
SOT343 |
25000 |
只有原装绝对原装,支持BOM配单! |
|||
RENESAS |
2023+ |
SMD |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
Panasonic |
22+23+ |
Sot-23 |
34033 |
绝对原装正品全新进口深圳现货 |
|||
RENESASACHI |
SOT-343 |
608900 |
原包原标签100%进口原装常备现货! |
3SK3芯片相关品牌
3SK3规格书下载地址
3SK3参数引脚图相关
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