Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

GaAs N Channel Dual Gate MES FET UHF RF Amplifier

Features • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz)

Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

Silicon N-Channel Dual Gate MOS FET

Features · Low noise figure. NF = 1.0 dB typ. at f = 200 MHz · Capable of low voltage operation · Provide mini mold packages; MPAK-4R(SOT-143 var.) Application UHF / VHF RF amplifier

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

Features • Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) • High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) • Capable low voltage operation; +B = 3.5 V • High Endurance Voltage; VDS = 6 V

SILICON N CHANNEL MOS TYPE

CHOPPER CIRCUIT APPLICATIONS. SWITCHING CIRCUIT APPLICATIONS. IMPEDANCE CONVERTER APPLICATIONS. FEATURES : Ultra Small Drain-Source Thermoelectromotive Force : Vemf = 1.3 uV/°C (Typ .) High Resistance Ratio : r DS (ON) = 50ffi(Max.) at. Vg1S=3V : r DS (OFF)= 100WQ(Min.) at. Vc i S =OV Low G

Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

文件：76.68 Kbytes Page：7 Pages

Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

文件：76.68 Kbytes Page：7 Pages

封装/外壳：SC-82A，SOT-343 包装：管件 描述：TRANS N-CH CMPAK-4 分立半导体产品 晶体管 - FET，MOSFET - 射频

N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)

文件：525.04 Kbytes Page：9 Pages

Silicon N-Channel Dual Gate MOS FET

文件：59.19 Kbytes Page：10 Pages

Silicon N-Channel Dual Gate MOS FET

Silicon N-Channel Dual Gate MOS FET

Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

TRANSISTOR

文件：192.33 Kbytes Page：3 Pages

Top Mount RGB Chip LED

Features(產品特色) •Package: RGB 3 in 1 package/4pin Polarity (封裝方式：RGB三色封裝/4極性點) •Anti-Reflection resin 啞光膠體 •View angle : >=120ﾟ (min 50 brightness) 發光角度：大於等於120度﹝50光強度﹞ •Component solder able surface finish is gold 元件可銲接表面為鍍金板 •High contrast 高對比性 Main Applications(主要應用) •Indoor display