Silicon N-Channel Dual Gate MOS FET

Features · Low noise figure. NF = 1.0 dB typ. at f = 200 MHz · Capable of low voltage operation · Provide mini mold packages; MPAK-4R(SOT-143 var.) Application UHF / VHF RF amplifier

Silicon N-Channel Dual Gate MOS FET

· Low noise figure.\n   NF = 1.0 dB typ. at f = 200 MHz\n· Capable of low voltage operation\n· Provide mini mold packages; MPAK-4R(SOT-143 var.)Application\nUHF / VHF RF amplifier\n ;