N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

For Low Noise Audio Amplifier Applications • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V)

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON)= 2.0 Ω(typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 720 V) • Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

DC / DC Converter Applications

DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Avalanche resistance guarantee. • Pb-free type.

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=20mΩ (typ.) • 4V drive • Input capacitance Ciss=1780pF (typ.)

General-Purpose Switching Device Applications

N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

2SK3705

Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor driver, DC / DC converter. • Avalanche resistance guarantee.

General-Purpose Switching Device Applications

N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Motor driver, DC / DC converter. • Avalanche resistance guarantee.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=45mΩ (typ.) • 4V drive • Input capacitance Ciss=2150pF (typ.)

General-Purpose Switching Device Applications

N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Motor driver, DC / DC converter. • Avalanche resistance guarantee.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 33mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 37A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

General-Purpose Switching Device Applications

N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Motor driver, DC / DC converter. • Avalanche resistance guarantee.

N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

For Low Noise Audio Amplifier Applications • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA) • High breakdown voltage: VGDS = −40 V • Super low noise: NF = 1.0dB (typ.)

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

Built-in gate protection diode

Features ･ Low on-state resistance 5.0mΩ VGS=10V ･ Built-in gate protection diode ･ SMD PKG Applications ･ DC－ DC converter ･ Mortar drive

Low on-resistance

■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltag

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 580mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

MOS Field Effect Transistor

Features High voltage: VDSS = 250 V Gate voltage rating: ± 30 V Low on-state resistance RDS(on) = 0.58Ω MAX. (VGS = 10 V, ID = 4.5 A) Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A) Built-in gate protection diode

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltage rating: ±30 V • Low on-stat

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltage rating: ±30 V • Low on-stat

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 580mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltag

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low o

MOS Field Effect Transistor

Features • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low on-state resistance: RDS(on) = 0.83 MAX. (VGS = 10 V, ID = 5 A)

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low on-state resistance: RD

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low on-state resistance: RD

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low o

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 25 A) •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 25 A) • Low Ciss: Ciss = 32

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 6.0 mΩMAX. (VGS= 10 V, ID= 38 A) RDS(on)2= 9.5 mΩMAX. (VGS= 4 V, ID= 38 A) •Low C iss: C iss= 8400 pF TYP. •Bu

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A) •

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

MOS Field Effect Transistor

MOS Field Effect Transistor Features Super low on-state resistance: RDS(on)1=6.5mÙMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mÙMAX.(VGS=4.5V,ID=30A) Low Ciss:Ciss = 2700 pF TYP. Built-in gate protection diode

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 6.5 mΩMAX. (VGS= 10 V, ID= 30 A) RDS(on)2= 9.1 mΩMAX. (VGS= 4.5 V, ID= 30 A) •Low Ciss: Ciss= 2700 pF TYP.

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 6.5 mΩMAX. (VGS= 10 V, ID= 30 A) RDS(on)2= 9.1 mΩMAX. (VGS= 4.5 V, ID= 30 A) •Low Ciss: Ciss= 2700 pF TYP.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3717 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1400 μS TYP. (IDSS = 250 μA) • Includes diode and high resistance at G-S

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3717 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1400 µS TYP. (IDSS = 250 µA) • Includes diode and high resistance at G-S

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3718 is suitable for converter of ECM. FEATURES • Low noise NV = −117 dB TYP. (VDS = 4.5 V, C = 10 pF, RL = 1.0 kΩ) • Especially suitable for telephone, cellular phone & audio • Small package SC-89 (TUSM)

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3718 is suitable for converter of ECM. FEATURES • Low noise NV = −117 dB TYP. (VDS = 4.5 V, C = 10 pF, RL = 1.0 kΩ) • Especially suitable for telephone, cellular phone & audio • Small p

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3719 is suitable for converter of ECM. FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super thin thickness

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3719 is suitable for converter of ECM. FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super thin thickness package t = 0.37 mm TYP.

N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications High breakdown voltage: VGDS= −40 V High input impedance: IGSS= −1.0 nA (max) (VGS= −30 V) Low RDS (ON): RDS (ON)= 20 Ω(typ.) (IDSS= 15 mA) Small package

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

FM Tuner, VHF-Band Amplifier Applications

FM Tuner, VHF-Band Amplifier Applications Features • Low noise. • High power gain. • Small reverse transfer capacitance.

FM Tuner, VHF-Band Amplifier Applications

FM Tuner, VHF-Band Amplifier Applications Features • Low noise. • High power gain. • Small reverse transfer capacitance.

N-channel Enhancement Mode MOSFET

Features ● Low on-resistance, low Qg ● High avalanche resistance ● For high-speed switching