N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications High breakdown voltage: VGDS= −40 V High input impedance: IGSS= −1.0 nA (max) (VGS= −30 V) Low RDS (ON): RDS (ON)= 20 Ω(typ.) (IDSS= 15 mA) Small package

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications

Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant-Current and Impedance Converter Applications

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FM Tuner, VHF-Band Amplifier Applications

FM Tuner, VHF-Band Amplifier Applications Features • Low noise. • High power gain. • Small reverse transfer capacitance.

FM Tuner, VHF-Band Amplifier Applications

FM Tuner, VHF-Band Amplifier Applications Features • Low noise. • High power gain. • Small reverse transfer capacitance.

N-channel Enhancement Mode MOSFET

Features ● Low on-resistance, low Qg ● High avalanche resistance ● For high-speed switching

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.2A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant-Current and Impedance Converter Applications

文件：696.84 Kbytes Page：5 Pages

Power Device - Power MOS FETs

N-Channel 650 V (D-S) MOSFET

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功率MOSFET 400V-500V