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2SK370价格

参考价格：￥3.8129

型号：2SK3703-1E 品牌：ON 备注：这里有2SK370多少钱，2025年最近7天走势，今日出价，今日竞价，2SK370批发/采购报价，2SK370行情走势销售排行榜，2SK370报价。

型号	功能描述	生产厂家企业	LOGO
2SK370	N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS) For Low Noise Audio Amplifier Applications • Suitable for use as first stage for equalizer and MC head amplifiers. • High \|Yfs\|: \|Yfs\| = 22 ms (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V)	TOSHIBA 东芝	TOSHIBA
2SK370	MINI PACKAGE SERIES Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge	TOSHIBA 东芝	TOSHIBA
2SK370	Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications	TOSHIBA 东芝	TOSHIBA
2SK370	Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications 文件：654.97 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SK3700	Silicon N Channel MOS Type Switching Regulator Applications Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON)= 2.0 Ω(typ.) • High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 720 V) • Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK3700	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK3702	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3702	DC / DC Converter Applications DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.	SANYO 三洋	SANYO
2SK3702JS	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Avalanche resistance guarantee. • Pb-free type.	SANYO 三洋	SANYO
2SK3703	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=20mΩ (typ.) • 4V drive • Input capacitance Ciss=1780pF (typ.)	SANYO 三洋	SANYO
2SK3704	General-Purpose Switching Device Applications N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter.	SANYO 三洋	SANYO
2SK3704	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC	ISC 无锡固电	ISC
2SK3705	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3705	2SK3705 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor driver, DC / DC converter. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK3706	General-Purpose Switching Device Applications N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Motor driver, DC / DC converter. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK3706	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-	ISC 无锡固电	ISC
2SK3707	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=45mΩ (typ.) • 4V drive • Input capacitance Ciss=2150pF (typ.)	SANYO 三洋	SANYO
2SK3707	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3708	General-Purpose Switching Device Applications N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Motor driver, DC / DC converter. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK3708	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 33mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK3709	General-Purpose Switching Device Applications N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Motor driver, DC / DC converter. • Avalanche resistance guarantee.	SANYO 三洋	SANYO
2SK3709	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 37A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D	ISC 无锡固电	ISC
2SK370_07	Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications 文件：654.97 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SK3700	Switching Regulator Applications 文件：235.58 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
2SK3700	iscN-Channel MOSFET Transistor 文件：326.59 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3700_09	Switching Regulator Applications 文件：235.58 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
2SK3702	N-Channel 60 V (D-S) MOSFET 文件：2.1379 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SK3702	High Output MOSFETs	ONSEMI 安森美半导体	ONSEMI
2SK3703	N-Channel MOSFET uses advanced trench technology 文件：1.48691 Mbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
2SK3703	N-Channel 60 V (D-S) MOSFET 文件：2.13782 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SK3703	General-Purpose Switching Device Applications 文件：57.93 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SK3703	isc N-Channel MOSFET Transistor 文件：295.25 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3703	N-Channel Power MOSFET, 60V, 30A, 26mΩ, TO-220F-3SG	ONSEMI 安森美半导体	ONSEMI
2SK3703	N-Channel Power MOSFET 文件：261.04 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
2SK3703	General-Purpose Switching Device Applications 文件：92.22 Kbytes Page：7 Pages	SANYO 三洋	SANYO
2SK3703_06	General-Purpose Switching Device Applications 文件：57.93 Kbytes Page：5 Pages	SANYO 三洋	SANYO
2SK3703_12	General-Purpose Switching Device Applications 文件：92.22 Kbytes Page：7 Pages	SANYO 三洋	SANYO
2SK3703-1E	N-Channel Power MOSFET 文件：261.04 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
2SK3703-1EX	封装/外壳：TO-220-3 整包包装：管件描述：MOSFET N-CH TO220F 分立半导体产品晶体管 - FET，MOSFET - 单个	ONSEMI 安森美半导体	ONSEMI
2SK3706	N-Channel 100-V (D-S) MOSFET 文件：2.19235 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SK3707	N-Channel Power MOSFET 文件：261.98 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
2SK3707	General-Purpose Switching Device Applications 文件：367.76 Kbytes Page：7 Pages	SANYO 三洋	SANYO
2SK3707_12	General-Purpose Switching Device Applications 文件：367.76 Kbytes Page：7 Pages	SANYO 三洋	SANYO
2SK3707-1E	N-Channel Power MOSFET 文件：261.98 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
2SK3709	N-Channel 100-V (D-S) MOSFET 文件：1.62667 Mbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI

2SK370产品属性

类型
描述
型号
2SK370
功能描述
MOSFET POWER MOSFET
RoHS
否
制造商
STMicroelectronics
晶体管极性
N-Channel
汲极/源极击穿电压
650 V
闸/源击穿电压
25 V
漏极连续电流
130 A 电阻汲极/源极
RDS（导通）
0.014 Ohms
配置
Single
安装风格
Through Hole
封装/箱体
Max247
封装
Tube

2SK370供应商更多...

更新时间：2025-12-25 18:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2SK3703-1E	ON(安森美)	24+	标准封装	7506	全新原装正品/价格优惠/质量保障	询价
深圳市得捷芯城科技有限公司	2SK3708	SAY	24+	NA/	3828	原装现货,当天可交货,原型号开票	询价
深圳市赛美科科技有限公司	2SK3702JS	SANYO/三洋		TO-220F	8805	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市卓越微芯电子有限公司	2SK3702JS	SANYO	25+	TO220F	340	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市拓亿芯电子有限公司	2SK3700	TOSHIBA/东芝	25+	TO-3P	9800	全新原装现货,假一赔十	询价
中天科工半导体（深圳）有限公司	2SK3704	ON/安森美	20+	TO-220FP	36900	原装优势主营型号-可开原型号增税票	询价
深圳市正纳电子有限公司	2SK3700	TOSHIBA(东芝)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市振宏微科技有限公司	2SK3704	SANYO	23+	TO-220F	5000	专做原装正品,假一罚百!	询价
深圳市科恒伟业电子有限公司	2SK3706	SANYO/三洋	2450+	TO-220	8850	只做原装正品假一赔十为客户做到零风险!!	询价
贸泽芯城（深圳）电子科技有限公司	2SK370E	SANYO/三洋	23+	TO220	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价

2SK370芯片相关品牌

2SK370规格书下载地址

2SK370参数引脚图相关

2SK370数据表相关新闻

2SMPP-02
优势渠道
2023-2-16
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-10
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

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2SK370价格

2SK370产品属性

2SK370供应商更多...

2SK370芯片相关品牌

2SK370规格书下载地址

2SK370参数引脚图相关

2SK370数据表相关新闻

2SMPP-02

2SK3105-T1B-A找代理商上深圳百域芯科技

2SX1-T

2SK508G-K51-AE3-R

2SK3313

2SK3591-01R

DdatasheetPDF页码索引