N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

For Low Noise Audio Amplifier Applications • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA) • High breakdown voltage: VGDS = −40 V • Super low noise: NF = 1.0dB (typ.)

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

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Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

Built-in gate protection diode

Features ･ Low on-state resistance 5.0mΩ VGS=10V ･ Built-in gate protection diode ･ SMD PKG Applications ･ DC－ DC converter ･ Mortar drive

Low on-resistance

■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching

MOS Field Effect Transistor

Features High voltage: VDSS = 250 V Gate voltage rating: ± 30 V Low on-state resistance RDS(on) = 0.58Ω MAX. (VGS = 10 V, ID = 4.5 A) Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A) Built-in gate protection diode

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltage rating: ±30 V • Low on-stat

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 580mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltag

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltag

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 580mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 250 V • Gate voltage rating: ±30 V • Low on-stat

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low on-state resistance: RD

MOS Field Effect Transistor

Features • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low on-state resistance: RDS(on) = 0.83 MAX. (VGS = 10 V, ID = 5 A)

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low o

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low on-state resistance: RD

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low o

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 25 A) • Low Ciss: Ciss = 32

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 25 A) •

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A) •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 6.0 mΩMAX. (VGS= 10 V, ID= 38 A) RDS(on)2= 9.5 mΩMAX. (VGS= 4 V, ID= 38 A) •Low C iss: C iss= 8400 pF TYP. •Bu

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 6.5 mΩMAX. (VGS= 10 V, ID= 30 A) RDS(on)2= 9.1 mΩMAX. (VGS= 4.5 V, ID= 30 A) •Low Ciss: Ciss= 2700 pF TYP.

MOS Field Effect Transistor

MOS Field Effect Transistor Features Super low on-state resistance: RDS(on)1=6.5mÙMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mÙMAX.(VGS=4.5V,ID=30A) Low Ciss:Ciss = 2700 pF TYP. Built-in gate protection diode

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 6.5 mΩMAX. (VGS= 10 V, ID= 30 A) RDS(on)2= 9.1 mΩMAX. (VGS= 4.5 V, ID= 30 A) •Low Ciss: Ciss= 2700 pF TYP.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3717 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1400 µS TYP. (IDSS = 250 µA) • Includes diode and high resistance at G-S

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3717 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1400 μS TYP. (IDSS = 250 μA) • Includes diode and high resistance at G-S

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3718 is suitable for converter of ECM. FEATURES • Low noise NV = −117 dB TYP. (VDS = 4.5 V, C = 10 pF, RL = 1.0 kΩ) • Especially suitable for telephone, cellular phone & audio • Small p

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3718 is suitable for converter of ECM. FEATURES • Low noise NV = −117 dB TYP. (VDS = 4.5 V, C = 10 pF, RL = 1.0 kΩ) • Especially suitable for telephone, cellular phone & audio • Small package SC-89 (TUSM)

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3719 is suitable for converter of ECM. FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super thin thickness package t = 0.37 mm TYP.

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3719 is suitable for converter of ECM. FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super thin thickness

Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

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isc N-Channel MOSFET Transistor

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