SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 6.5 mΩMAX. (VGS= 10 V, ID= 30 A) RDS(on)2= 9.1 mΩMAX. (VGS= 4.5 V, ID= 30 A) •Low Ciss: Ciss= 2700 pF TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

MOS Field Effect Transistor

MOS Field Effect Transistor Features Super low on-state resistance: RDS(on)1=6.5mÙMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mÙMAX.(VGS=4.5V,ID=30A) Low Ciss:Ciss = 2700 pF TYP. Built-in gate protection diode

Nch Single Power Mosfet 40V 60A 6.5Mohm Mp-3/To-251

The 2SK3716 is a Nch Single Power Mosfet 40V 60A 6.5Mohm Mp-3/To-251. • Super low on-state resistance: RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)\n• Low Ciss : Ciss = 2700 pF TYP.\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SK3716 Data SheetPDF24;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance: RDS(on)1= 6.5 mΩMAX. (VGS= 10 V, ID= 30 A) RDS(on)2= 9.1 mΩMAX. (VGS= 4.5 V, ID= 30 A) •Low Ciss: Ciss= 2700 pF TYP.

SWITCHING N-CHANNEL POWER MOS FET

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N-Channel MOSFET uses advanced trench technology

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Power MOSFETs