2SK315规格书应用电路三洋现货供应价格SANYO-IC资料网

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型号	功能描述	生产厂家企业	LOGO
2SK315	FM Tuner Applications FM Tuner Applications Features · Ideal for FM tuners in radios, stereos, etc. · Because it is compactly packaged, sets can be made compact. · Small Crss (Crss=0.08pF typ). · High yfs (yfs=12.0ms typ).	SANYO 三洋	SANYO
2SK315	N-Channel Junction Silicon FET FM Tuner Applications	ONSEMI 安森美半导体	ONSEMI
2SK3150	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3150	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3150L	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3150L-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3150S	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3150STL-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3151	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS (on)= 11.5 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3151	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS (on)= 11.5 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3151-E	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS (on)= 11.5 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3152	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS= 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3152	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS= 100 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3153	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 65 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3153	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =65 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3153-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =65 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3154	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3154	Silicon N Channel MOS FET Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3154-E	Silicon N Channel MOS FET Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3155	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS= 100 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3155	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS= 100 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3155-E	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS= 100 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3156	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3156	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3156-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3157	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS= 50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3157	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS= 50 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3157-E	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS= 50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3158	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=40mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source	RENESAS 瑞萨	RENESAS
2SK3158	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=35mΩtyp. • High speed switching • 4V gate drive device can be driven from 5V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3158-E	Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS=40mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source	RENESAS 瑞萨	RENESAS
2SK3159	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3159	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK3159-E	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	RENESAS 瑞萨	RENESAS
2SK3150(L)	Silicon N Channel MOS FET High Speed Power Switching	RENESAS 瑞萨	RENESAS
2SK3150(L)_15	Silicon N Channel MOS FET High Speed Power Switching 文件：132.31 Kbytes Page：11 Pages	RENESAS 瑞萨	RENESAS
2SK3150L	isc N-Channel MOSFET Transistor 文件：327.27 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3150L	Power MOSFETs	RENESAS 瑞萨	RENESAS
2SK3150S	isc N-Channel MOSFET Transistor 文件：401.13 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3151	isc N-Channel MOSFET Transistor 文件：334.89 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3151_15	Silicon N Channel MOS FET High Speed Power Switching 文件：108.52 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3152	isc N-Channel MOSFET Transistor 文件：283.95 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3152_15	Silicon N Channel MOS FET High Speed Power Switching 文件：108.23 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3153	isc N-Channel MOSFET Transistor 文件：324.29 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3154	isc N-Channel MOSFET Transistor 文件：333.78 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3155	N-Channel 200 V (D-S) MOSFET 文件：1.02795 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
2SK3155	isc N-Channel MOSFET Transistor 文件：324.28 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3155	Silicon N Channel MOS FET High Speed Power Switching 文件：108.94 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3155_15	Silicon N Channel MOS FET High Speed Power Switching 文件：108.94 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3156	isc N-Channel MOSFET Transistor 文件：333.43 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3157	isc N-Channel MOSFET Transistor 文件：324.44 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3157_15	Silicon N Channel MOS FET High Speed Power Switching 文件：109.1 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3158	isc N-Channel MOSFET Transistor 文件：333.42 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3158	N-Channel MOSFET uses advanced trench technology 文件：1.10398 Mbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
2SK3158_15	Silicon N Channel MOS FET High Speed Power Switching 文件：73.08 Kbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
2SK3159	isc N-Channel MOSFET Transistor 文件：336.35 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK3159_15	Silicon N Channel MOS FET High Speed Power Switching 文件：112.7 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SK3159_16	150V - 50A - MOS FET High Speed Power Switching 文件：272.51 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS

2SK315产品属性

类型
描述
型号
2SK315
制造商
RENESAS
制造商全称
Renesas Technology Corp
功能描述
Silicon N Channel MOS FET High Speed Power Switching

2SK315供应商更多...

更新时间：2025-12-25 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SK3151-E	Renesas(瑞萨)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市高捷芯城科技有限公司	2SK3151	Renesas(瑞萨)	24+	标准封装	67048	支持大陆交货,美金交易。原装现货库存。	询价
深圳市明嘉莱科技有限公司	2SK3154	HITACHI/日立	24+	TO 220	158338	明嘉莱只做原装正品现货	询价
深圳市赛美科科技有限公司	2SK315	SANYO		TO-92S	8553	一级代理原装正品假一罚十价格优势长期供货	询价
中天科工半导体（深圳）有限公司	2SK3159	HIT/RENES	25+	TO-3P	45000	HIT/RENES全新现货2SK3159即刻询购立享优惠#长期有排单订	询价
深圳市振宏微科技有限公司	2SK3151	HITACHI	23+	NA	706	专做原装正品,假一罚百!	询价
贸泽芯城（深圳）电子科技有限公司	2SK315TRF	RENESAS/瑞萨	23+	SOT-23	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市中联芯电子有限公司	2SK3157-VB	VBSEMI/微碧半导体	24+	TO220F	7800	全新原厂原装正品现货,低价出售,实单可谈	询价
柒号芯城电子商务(深圳)有限公司	2SK3151-E	RENESAS	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市一线半导体有限公司	2SK3155	HIT	24+	TO-220	3778		询价

2SK315芯片相关品牌

2SK315规格书下载地址

2SK315参数引脚图相关

2SK315数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-27
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-24
2SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-24
2SK508G-K51-AE3-R
属性参数值商品目录结型场效应晶体管（JFET）连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道最大功率耗散（Ta=25°C） 200mW
2020-11-12
2SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-28
2SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28

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2SK315产品属性

2SK315供应商更多...

2SK315芯片相关品牌

2SK315规格书下载地址

2SK315参数引脚图相关

2SK315数据表相关新闻

2SK303L-SOT113SR-V4-TG_UTC代理商

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK3105-T1B-A找代理商上深圳百域芯科技

2SK508G-K51-AE3-R

2SK3313

2SK3591-01R

DdatasheetPDF页码索引