位置：首页 > IC中文资料第12397页 > 2SK314
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS(on)= 4 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS(on)= 4 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching • Low on-resistance RDS(on)= 4 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching * Low on-resistance RDS(on)=4mΩ typ. * Low drive current * 4V gate drive device can be driven from 5V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching * Low on-resistance RDS(on)= 4 mΩ typ. * Low drive current * 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching * Low on-resistance RDS(on)= 4 mΩ typ. * Low drive current * 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Cannel MOSFET Features Low on-resistance RDS=0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source | KEXIN 科信电子 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=45 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=45 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：323.82 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：333 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：324.08 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Transistors>Switching/MOSFETs | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching | RENESAS 瑞萨 | | ||
N-Channel 100 V (D-S) MOSFET 文件：1.00819 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 100-V (D-S) MOSFET 文件：1.035599 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：398.99 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
High Speed Power Switching 文件：246.54 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：401.25 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 100 V (D-S) MOSFET 文件：1.01428 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 100 V (D-S) MOSFET 文件：1.00819 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 100-V (D-S) MOSFET 文件：924.31 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：314.73 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：51.76 Kbytes Page：9 Pages | HitachiHitachi Semiconductor 日立日立公司 | | ||
isc N-Channel MOSFET Transistor 文件：333.65 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 100-V (D-S) MOSFET 文件：949.58 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | |
2SK314产品属性
- 类型
描述
- 型号
2SK314
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
32500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ORIGINAL |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
22+ |
TO-252 |
20000 |
只做原装 |
|||
RENESAS |
TO-252 |
69520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS |
20+ |
TO-252 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
TO-252 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS/瑞萨 |
23+ |
DPAK(L)-(2)TO-251 |
2047880 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
25+ |
ZIP |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
HIT |
2023+ |
IPAK |
50000 |
原装现货 |
|||
RENESAS/瑞萨 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
2SK314芯片相关品牌
2SK314规格书下载地址
2SK314参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SK3161
- 2SK3160
- 2SK316
- 2SK3159
- 2SK3158
- 2SK3157
- 2SK3156
- 2SK3155
- 2SK3154
- 2SK3153
- 2SK3152
- 2SK3151
- 2SK3150
- 2SK315
- 2SK3149
- 2SK3148-E
- 2SK3148(E)
- 2SK3148
- 2SK3147STL-E
- 2SK3147S-E
- 2SK3147S
- 2SK3147L-E
- 2SK3147-L(E)
- 2SK3147L
- 2SK3147(S)
- 2SK3147(L)|2SK3147(S)
- 2SK3147(L)
- 2SK3147
- 2SK3142-E
- 2SK3142-01(E)
- 2SK3142
- 2SK3141-E
- 2SK3141
- 2SK3140(E)
- 2SK3140
- 2SK3136-E
- 2SK3136
- 2SK3135STL-E
- 2SK3135S
- 2SK3135L-E
- 2SK3135L
- 2SK3135(L)|2SK3135(S)
- 2SK3135(L)
- 2SK3135
- 2SK3134STL-E
- 2SK3134S
- 2SK3134L-E
- 2SK3134L
- 2SK3134
- 2SK3133
- 2SK3132_06
- 2SK3132(Q)
- 2SK3132
- 2SK3131_09
- 2SK3131_06
- 2SK3131(Q)
- 2SK3131
- 2SK3130_09
- 2SK3130
- 2SK3129
- 2SK3128
- 2SK3127
- 2SK3126
- 2SK3125
- 2SK3124
- 2SK3122
- 2SK3121
- 2SK3120
- 2SK3119
- 2SK3117
- 2SK3116
- 2SK3115
2SK314数据表相关新闻
2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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