型号 功能描述 生产厂家&企业 LOGO 操作
2SK3147

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS=0.1Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SK3147

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS=0.1Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SK3147

N-Channel100V(D-S)MOSFET

文件:1.00819 Mbytes Page:7 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS=0.1Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS=0.1Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNCannelMOSFET

Features Lowon-resistance RDS=0.1typ. Highspeedswitching 4Vgatedrivedevicecanbedrivenfrom5Vsource

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS=0.1Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS=0.1Ωtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

N-Channel100-V(D-S)MOSFET

文件:1.035599 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

iscN-ChannelMOSFETTransistor

文件:398.99 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HighSpeedPowerSwitching

文件:246.54 Kbytes Page:8 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

iscN-ChannelMOSFETTransistor

文件:401.25 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel100V(D-S)MOSFET

文件:1.01428 Mbytes Page:7 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel100V(D-S)MOSFET

文件:1.00819 Mbytes Page:7 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

2SK3147产品属性

  • 类型

    描述

  • 型号

    2SK3147

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2025-7-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Renesas(瑞萨)
24+
标准封装
17048
支持大陆交货,美金交易。原装现货库存。
RENESAS/瑞萨
24+
NA/
3350
原装现货,当天可交货,原型号开票
RENESAS/瑞萨
22+
SOT252
100000
代理渠道/只做原装/可含税
ORIGINAL
24+
NA
990000
明嘉莱只做原装正品现货
RENESAS/瑞萨
24+
TO-252
33500
全新进口原装现货,假一罚十
RENESAS
20+
TO-252
63258
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
1542+
TO-252
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VBsemi/台湾微碧
21+
TO-252
10691
原装现货假一赔十
VB
2024
DPAK(S)T
58209
16余年资质 绝对原盒原盘代理渠道 更多数量
RENESAS
23+
NA
1319
专做原装正品,假一罚百!

2SK3147芯片相关品牌

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  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

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