位置：首页 > IC中文资料第1357页 > 2SK3147
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3147 | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 |   | |
2SK3147 | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | |
2SK3147 | N-Channel 100 V (D-S) MOSFET 文件：1.00819 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
2SK3147 | Silicon N Channel MOS FET High Speed Power Switching | RENESAS 瑞萨 | | |
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Cannel MOSFET Features Low on-resistance RDS=0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source | KEXIN 科信电子 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
N-Channel 100-V (D-S) MOSFET 文件：1.035599 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：398.99 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
High Speed Power Switching 文件：246.54 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：401.25 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 100 V (D-S) MOSFET 文件：1.01428 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 100 V (D-S) MOSFET 文件：1.00819 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
2SK3147产品属性
- 类型
描述
- 型号
2SK3147
- 制造商
Renesas Electronics Corporation
- 功能描述
Bulk
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET N-CH 100V 5A 3-Pin(2+Tab) DPAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
TO-252 |
60000 |
全新原装现货 |
|||
HITACHI/日立 |
24+ |
TO-251 |
47186 |
郑重承诺只做原装进口现货 |
|||
RENESAS |
2511 |
TO-252 |
100 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
VBSEMI/台湾微碧 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS/瑞萨 |
24+ |
TO-252 |
33500 |
全新进口原装现货,假一罚十 |
|||
ORIGINAL |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
VBsemi(台湾微碧) |
2447 |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
RENESAS |
2023+ |
null |
4798 |
专注配单,只做原装进口现货 |
|||
SANYO |
24+ |
60000 |
|||||
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
2SK3147规格书下载地址
2SK3147参数引脚图相关
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- 2SK3154
- 2SK3153
- 2SK3152
- 2SK3151
- 2SK3150S
- 2SK3150L-E
- 2SK3150L
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- 2SK3150(L)|2SK3150(S)
- 2SK3150(L)
- 2SK3150
- 2SK315
- 2SK3149-E
- 2SK3149
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- 2SK3148(E)
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- 2SK3147STL-E
- 2SK3147S-E
- 2SK3147S
- 2SK3147L-E
- 2SK3147-L(E)
- 2SK3147L
- 2SK3147(S)
- 2SK3147(L)|2SK3147(S)
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- 2SK3135L
- 2SK3135(L)|2SK3135(S)
- 2SK3135(L)
- 2SK3135
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- 2SK3134S
- 2SK3134L-E
- 2SK3134L
- 2SK3134
- 2SK3133
- 2SK3132_06
- 2SK3132
- 2SK3131
- 2SK3130
- 2SK3129
- 2SK3128
- 2SK3127
- 2SK3126
- 2SK3125
- 2SK3124
- 2SK3122
- 2SK3121
- 2SK3120
- 2SK3119
2SK3147数据表相关新闻
2SK303L-SOT113SR-V4-TG_UTC代理商
2SK303L-SOT113SR-V4-TG_UTC代理商
2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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