位置：首页 > IC中文资料第8123页 > 2SK3147S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3147S | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SK3147S | Silicon N Cannel MOSFET Features Low on-resistance RDS=0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source | KEXIN 科信电子 | | |
2SK3147S | N-Channel 100 V (D-S) MOSFET 文件：1.01428 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
2SK3147S | isc N-Channel MOSFET Transistor 文件：401.25 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SK3147S | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
N-Channel 100 V (D-S) MOSFET 文件：1.00819 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.1 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
N-Channel 100 V (D-S) MOSFET 文件：1.00819 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS= 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
N-Channel 100-V (D-S) MOSFET 文件：1.035599 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
2SK3147S产品属性
- 类型
描述
- 型号
2SK3147S
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
ORIGINAL |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
25+ |
TO-252 |
33500 |
全新进口原装现货,假一罚十 |
|||
RENESAS |
23+ |
NA |
1319 |
专做原装正品,假一罚百! |
|||
RENESAS |
26+ |
TO-252 |
360000 |
进口原装现货 |
|||
RENESAS |
23+ |
TO-252 |
32662 |
||||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
RENESAS/瑞萨 |
新年份 |
TO-252 |
69520 |
一级代理原装正品现货,支持实单! |
|||
HIT |
2023+ |
DPAK |
50000 |
原装现货 |
|||
RENESAS |
2023+ |
null |
4798 |
专注配单,只做原装进口现货 |
2SK3147S芯片相关品牌
2SK3147S规格书下载地址
2SK3147S参数引脚图相关
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2SK3147S数据表相关新闻
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2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
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2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-282SK3591-01R
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2020-3-28
DdatasheetPDF页码索引
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