MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(o

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3113 is N-channel DMOSFET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0

MOS Field Effect Transistor

Features Low on-state resistance RDS(on)=4.4Ω MAX. (VGS=10V,ID=1.0A) Low gate charge QG= 9 nC TYP. (VDD=450V,VGS=10V,ID=2.0A) Gate voltage rating ±30V Avalanche capability ratings

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on)= 4.4 ΩMAX. (VGS= 10 V, ID= 1.0 A)

isc N-Channel MOSFET Transistor

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