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型号	功能描述	生产厂家企业	LOGO
2SK162	Field Effect Transistor SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N	NEC 瑞萨	NEC
2SK1620	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1620	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1620L	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1620L	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1620L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1620L-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1620S	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1620S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1620S	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1620STL-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1621L	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1621L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1621S	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1622	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1622L	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1622L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1622S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.04Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1622S	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1623	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1623	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1623L	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1623L	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1623L-E	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1623S	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1623S	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1623S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 85mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1623STL-E	Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1624	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1624L	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1624L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1624S	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1624S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1625	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1625L	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1625L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1625S	Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1625S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1626	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1626	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1626-E	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1627	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1627	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1627	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1627-E	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter	RENESAS 瑞萨	RENESAS
2SK1628	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1628	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1628	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1628-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1629	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1629	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1629	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK1629-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK1629-E1-E	500V - 30A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.22 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C) • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter • Quality grade: Standard	RENESAS 瑞萨	RENESAS
2SK1620	Silicon N-Channel MOS FET	RENESAS 瑞萨	RENESAS
2SK1620(L)	Power switching MOSFET	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1620(L)/(S)	Silicon N Channel MOS FET	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1620L	isc N-Channel MOSFET Transistor 文件：299.25 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1620S	isc N-Channel MOSFET Transistor 文件：298.72 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK1621L	isc N-Channel MOSFET Transistor 文件：326.58 Kbytes Page：2 Pages	ISC 无锡固电	ISC

2SK162产品属性

类型
描述
型号
2SK162
制造商
Renesas Electronics Corporation
制造商
Renesas Electronics Corporation
功能描述
Trans MOSFET N-CH 450V 5A 3-Pin(3+Tab) TO-220FM Box

2SK162供应商更多...

更新时间：2025-12-25 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SK1626	HITACHI/日立	24+	NA/	3286	原装现货,当天可交货,原型号开票	询价
深圳市高捷芯城科技有限公司	2SK1628-E	RENESAS(瑞萨)/IDT	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市科芯源微电子有限公司	2SK1622	HITACHI	25+	TO263	54648	百分百原装现货实单必成欢迎询价	询价
深圳市明嘉莱科技有限公司	2SK1623	HITACHI/日立	24+	TO 262 263	158313	明嘉莱只做原装正品现货	询价
深圳市昌和盛利电子有限公司	2SK1623	NEC	NEW	TO-263	35890	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市鸿昌盛电子科技有限公司	2SK1623STR-E	RENESAS	25+		600	公司现货库存	询价
深圳市拓亿芯电子有限公司	2SK1623STR	RENESAS/瑞萨	25+	TO263-3	9800	全新原装现货,假一赔十	询价
中天科工半导体（深圳）有限公司	2SK1620L	RENESAS/瑞萨	25+	TO-252251	45000	RENESAS/瑞萨全新现货2SK1620L即刻询购立享优惠#长期有排单订	询价
深圳市振宏微科技有限公司	2SK1628	HIT	23+	TO-3PL	10000	专做原装正品,假一罚百!	询价
深圳市科恒伟业电子有限公司	2SK1623STR	HITACHI	2450+	SOT-263	8850	只做原装正品假一赔十为客户做到零风险!!	询价

2SK162芯片相关品牌

2SK162规格书下载地址

2SK162参数引脚图相关

2SK162数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品现货供应
2024-3-23
2SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-8
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
2021-6-24
2SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-12
2SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
2SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30

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2SK162产品属性

2SK162供应商更多...

2SK162芯片相关品牌

2SK162规格书下载地址

2SK162参数引脚图相关

2SK162数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)

2SD882SL-TO92B-P-TG_UTC代理商

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK1485-T1

2SK1985

2SK1985-01MR

DdatasheetPDF页码索引