| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK1623S | Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SK1623S | Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | RENESAS 瑞萨 | | |
2SK1623S | isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 85mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
2SK1623S | isc N-Channel MOSFET Transistor 文件：295.5 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
N-Channel 100-V (D-S) MOSFET 文件：1.72986 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
NEW |
TO-263 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
RENESAS |
25+ |
600 |
公司现货库存 |
||||
RENESAS/瑞萨 |
25+ |
TO263-3 |
9800 |
全新原装现货,假一赔十 |
|||
HITACHI |
2450+ |
SOT-263 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
25+23+ |
TO263 |
74522 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
HITACHI/日立 |
23+ |
TO-263 |
50000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
HITACHI |
24+ |
TO-263 |
25600 |
||||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
HITACHI |
2023+ |
TO-263 |
50000 |
原装现货 |
2SK1623S芯片相关品牌
2SK1623S规格书下载地址
2SK1623S参数引脚图相关
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- 5000
- 4921
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- 2SK1618
- 2SK1614
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- 2SK1612
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- 2SK1610
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- 2SK160A
- 2SK1609
- 2SK1608
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- 2SK1605
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- 2SK1601
2SK1623S数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品 现货供应
2024-3-232SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
2021-6-242SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-302SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30
DdatasheetPDF页码索引
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