位置：首页 > IC中文资料第6829页 > 2SJ607
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ607 | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = | NEC 瑞萨 |   | |
2SJ607 | MOS Field Effect Transistor Features ● Low on-resistance RDS(on)1 =11 mΩ MAX. (VGS =-10 V, ID = -42A) RDS(on)2 = 16 mΩ MAX. (VGS = -4.0 V, ID =-42 A) ● Low Ciss: Ciss = 7500 pF TYP. ● Built-in gate protection diode | KEXIN 科信电子 | | |
2SJ607 | MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) | RENESAS 瑞萨 | | |
2SJ607 | Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = | NEC 瑞萨 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-60V ● ID =-83A ● RDS(ON) | KEXIN 科信电子 | | ||
MOS FIELD EFFECT TRANSISTOR 文件：214.25 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | |
2SJ607产品属性
- 类型
描述
- 型号
2SJ607
- 制造商
KEXIN
- 制造商全称
Guangdong Kexin Industrial Co.,Ltd
- 功能描述
MOS Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
25+23+ |
TO263 |
74980 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEC |
24+ |
TO-262 |
8866 |
||||
NEC |
08+ |
SOT-263 |
376 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENENSAS |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
NEC |
2402+ |
TO263-3 |
8324 |
原装正品!实单价优! |
|||
NEC |
26+ |
WLP-9 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
NEC |
24+ |
TO-262 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
24+ |
TO-220 |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC(日电电子) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
2SJ607规格书下载地址
2SJ607参数引脚图相关
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2019-10-30
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