位置：首页 > IC中文资料第6829页 > 2SJ607-Z
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ607-Z | MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
2SJ607-Z | MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFieldEffectTransistor Features ●Lowon-resistance RDS(on)1=11mΩMAX.(VGS=-10V,ID=-42A) RDS(on)2=16mΩMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=7500pFTYP. ●Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
P-ChannelMOSFET ■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=−10V,ID=−42A) RDS(on)2=16mΩMAX.(VGS=−4.0V,ID=−42A) •Lowinputcapacitance: Ciss= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
2SJ607-Z产品属性
- 类型
描述
- 型号
2SJ607-Z
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
NA/ |
4650 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
2020+ |
TO263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEC |
2020+ |
TO-263 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
RENESAS |
2023+ |
TO263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
23+ |
TO-220SMD |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
NEC |
22+23+ |
TO263 |
74980 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
RENESAS/瑞萨 |
22+ |
TO-263 |
3980 |
只做原装进口 免费送样!! |
|||
NEC |
2003+ |
TO263-3 |
674 |
||||
NEC |
23+ |
TO-263 |
35890 |
2SJ607-Z芯片相关品牌
2SJ607-Z规格书下载地址
2SJ607-Z参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SJ633.
- 2SJ633
- 2SJ632
- 2SJ630
- 2SJ629
- 2SJ628
- 2SJ626
- 2SJ625
- 2SJ624
- 2SJ621
- 2SJ620
- 2SJ619
- 2SJ618(F)
- 2SJ618
- 2SJ616-TD-E
- 2SJ616
- 2SJ615-TD-E
- 2SJ615
- 2SJ613-TD-E
- 2SJ613
- 2SJ612-TD-E
- 2SJ612
- 2SJ610_09
- 2SJ610_06
- 2SJ610(TE16L1,NQ)
- 2SJ610(Q)
- 2SJ610
- 2SJ609
- 2SJ608
- 2SJ607-ZJ-E1
- 2SJ607-ZJ
- 2SJ607-Z-AZ
- 2SJ607-S
- 2SJ607-AZ
- 2SJ607
- 2SJ606-ZJ
- 2SJ606-Z(AZ)
- 2SJ606-Z
- 2SJ606-S
- 2SJ606-AZ
- 2SJ606
- 2SJ605-ZJ-E1-AZ
- 2SJ605-ZJ
- 2SJ605-Z-AZ
- 2SJ605-Z
- 2SJ605-S
- 2SJ605-AZ
- 2SJ605
- 2SJ604-ZJ-E1-AZ
- 2SJ604-ZJ
- 2SJ604-Z-AZ
- 2SJ604-Z
- 2SJ604.
- 2SJ604
- 2SJ603
- 2SJ602
- 2SJ601
- 2SJ600
- 2SJ599
- 2SJ598
- 2SJ597
- 2SJ596
- 2SJ595
- 2SJ594
- 2SJ591
- 2SJ590
- 2SJ589
- 2SJ588
- 2SJ587
2SJ607-Z数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E原装正品现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SD669AL-TO126T-D-TG_UTC代理商
2SD669AL-TO126T-D-TG_UTC代理商
2023-2-22SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
