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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ607-Z | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = | NEC 瑞萨 |   | |
2SJ607-Z | MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) | RENESAS 瑞萨 | | |
2SJ607-Z | Power MOSFETs | RENESAS 瑞萨 | | |
MOS Field Effect Transistor Features ● Low on-resistance RDS(on)1 =11 mΩ MAX. (VGS =-10 V, ID = -42A) RDS(on)2 = 16 mΩ MAX. (VGS = -4.0 V, ID =-42 A) ● Low Ciss: Ciss = 7500 pF TYP. ● Built-in gate protection diode | KEXIN 科信电子 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = | NEC 瑞萨 | | ||
P-Channel MOSFET ■ Features ● VDS (V) =-60V ● ID =-83A ● RDS(ON) | KEXIN 科信电子 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A) • Low input capacitance: Ciss = | NEC 瑞萨 | |
2SJ607-Z产品属性
- 类型
描述
- 型号
2SJ607-Z
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
23+ |
TO263 |
2710 |
原厂原装正品 |
|||
NEC |
24+ |
NA/ |
4650 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
24+ |
6540 |
原装现货/欢迎来电咨询 |
||||
NEC |
08+ |
SOT-263 |
376 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
24+ |
TO-263 |
60000 |
全新原装现货 |
|||
NEC |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
NEC |
2402+ |
TO263-3 |
8324 |
原装正品!实单价优! |
|||
RENESAS |
2511 |
TO-263 |
6386 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NEC |
23+ |
TO263/2.5 |
20000 |
全新原装假一赔十 |
|||
RENESAS |
24+ |
TO263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
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2SJ607-Z规格书下载地址
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2019-10-30
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