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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
4154 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS/瑞萨 |
2450+ |
TO-3P |
9850 |
只做原装正品现货或订货假一赔十! |
|||
HITACHI |
23+ |
TO-3P |
900 |
专做原装正品,假一罚百! |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
RENESAS |
22+ |
TO-3P |
20000 |
公司只有原装 品质保证 |
|||
瑞萨Renesa |
25+ |
TO-3P |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
HIT |
24+ |
TO-3P |
20000 |
||||
RENESAS/瑞萨 |
24+ |
TO-247 |
47186 |
郑重承诺只做原装进口现货 |
|||
RENESAS |
26+ |
TO-3P |
360000 |
进口原装现货 |
|||
Renesas(瑞萨) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
2SJ555-EIC芯片相关品牌
2SJ555-EIC规格书下载地址
2SJ555-EIC参数引脚图相关
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2SJ555-EIC数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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