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Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

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RENESAS

瑞萨

更新时间:2025-12-25 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
950
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS/瑞萨
22+
SOT263
100000
代理渠道/只做原装/可含税
RENESAS
25+
TO-263
8000
只有原装
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
2450+
TO-263
9485
只做原装正品现货或订货假一赔十!
RENESAS/瑞萨
23+
TO-263
32500
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS
24+
TO-263
5000
全新原装正品,现货销售
24+
67
RENESAS
26+
TO-263
360000
进口原装现货

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