型号 功能描述 生产厂家 企业 LOGO 操作

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

文件:114.91 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ551STL产品属性

  • 类型

    描述

  • 型号

    2SJ551STL

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2025-12-28 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
24+
TO-263
5000
全新原装正品,现货销售
RENESAS
2511
TO-263
950
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENESAS/瑞萨
23+
TO-263
32500
原厂授权代理,海外优势订货渠道。可提供大量库存,详
HITACHI
1922+
SOT-263
35689
原装进口现货库存专业工厂研究所配单供货
RENESAS/瑞萨
23+
TO-263
50000
全新原装正品现货,支持订货
24+
67
RENESAS
26+
TO-263
360000
进口原装现货
HITACHI/日立
17+
262
31518
原装正品 可含税交易
NK/南科功率
2025+
TO-263
986966
国产
RENESAS
25+
TO-263
8000
只有原装

2SJ551STL数据表相关新闻