位置：首页 > IC中文资料第5780页 > 2SJ550(L)|2SJ550(S)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
P-Channel 60 V (D-S) MOSFET 文件：941.18 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：115.18 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
NA/ |
3852 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
25+ |
TO-263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
HITACHI |
03+ |
TO-263 |
497 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
22+ |
TO263 |
8000 |
原装正品支持实单 |
|||
VBSEMI/微碧半导体 |
24+ |
TO263 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
RENESAS |
23+ |
TO263 |
7850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HIT |
24+ |
TO-251 |
20000 |
2SJ550(L)|2SJ550(S)芯片相关品牌
2SJ550(L)|2SJ550(S)规格书下载地址
2SJ550(L)|2SJ550(S)参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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